IR1167ASPBF International Rectifier, IR1167ASPBF Datasheet - Page 13

• Manufacturer Part Number: IR1167ASPBF
• Description: IC MOSFET DRIVER N-CHAN 8-SOIC
• Manufacturer: International Rectifier
• Series: SmartRectifier™r

Specifications of IR1167ASPBF

• Configuration: Low-Side
• Input Type: Self Oscillating
• Delay Time: 60ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 12 V ~ 18 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Part Status: Active and Preferred
• Package: 8-Pin SOIC(NB)
• Circuit: Switching Regulator Controller
• Topology: Flyback / Resonant Half-Bridge
• Current Mode: Discontinuous / Critical / Continuous
• Vcc (min): 11.4
• Vcc (max): 18
• Vout (max): 200
• Iout (a): +2 / -7
• Switch Freq (khz): up to 500kHz
• Vgate Clamp (v): 10.7
• Programmability: MOT / OVT
• Enable Pin: Yes
• Isleep (ua): 200
• Automatic Mot Protection: No
• Pbf: PbF Option Available
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -

Switching Freq, T
www.irf.com
Figures 11-14 shows the maximum allowable V
different loads which are calculated using the design methodology discussed in AN1087.
Fig 13.
Max. Synchronous HEXFET Switching Frequency (kHz)
20
19
18
17
16
15
14
13
12
11
1W HEXFET Gate Resistance included
50
Max. V
100 150 200 250 300 350 400 450 500
J
CC
=125 C, T
Voltage vs. Synchronous Rectifier
IC
= 85 C, external R
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
G
=4W,
CC
voltage vs. maximum switching frequency for
Switching Freq, T
Fig 14.
Maximum Synchronous HEXFET Switching Frequency (kHz)
20
19
18
17
16
15
14
13
12
11
1W HEXFET Gate Resistance included
50
Max V
100 150 200 250 300 350 400 450 500
J
CC
=125 C, T
Voltage vs. Synchronous Rectifier
IR1167AS/BS
IC
= 85 C, external R
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
G
=6W,
13