MX879R IXYS, MX879R Datasheet - Page 133

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MX879R

Manufacturer Part Number
MX879R
Description
IC DVR RELAY/LOAD 8CH 60V 28-QFN
Manufacturer
IXYS
Datasheets

Specifications of MX879R

Input Type
Parallel/Serial
Number Of Outputs
8
Current - Output / Channel
120mA
Voltage - Supply
6 V ~ 60 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
28-QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
On-state Resistance
-
Current - Peak Output
-
Linear Power MOSFETs
High Voltage SOA
 IXTH 30N50L2
 IXTQ 30N50L2
 IXTT 30N50L2
 IXTK 17N120L
 IXTN 17N120L
 IXTN 8N150L
Part Type
New
IXTH 24N50L
IXTK 46N50L
IXTN 46N50L
IXTX 46N50L
IXTB 62N50L
IXTN 62N50L
IXTH 12N100L
IXTK 22N100L
IXTN 22N100L
IXTX 22N100L
IXTB 30N100L
IXTN 30N100L
Unlike “normal” MOSFET operation where the transistor functions like an on/off switch, linear ap-
plications will subject the transistor to high thermal stress due to the simultaneous occurrence of
high drain voltage and current.
This is the reason that some types of MOSFETs are not recommended for use in linear applica-
tions. However, IXYS’ new Linear Power MOSFETs have been specifically designed to handle the
types of tough “linear operating conditions” that are frequently being encountered in the consumer
and industrial markets.
Some common applications include linear power supplies, class A amplifiers, electronic loads,
programmable resistors and motor control. Optimizations were made to the fundamental planar
cell design in order to maximize the power dissipation capabilities of this Linear Power MOSFET
family.
The Forward Bias Safe Operating Area (FBSOA) characteristic is one such targeted parameter
that was optimized, which essentially allowed for a larger operating „window“ as dictated by the
power limitations of the device.
This extended power window translates to improved ruggedness and power dissipation capabi-
lities during the high thermal stress conditions posed by the linear operating environment. IXYS
provides a wide selection of Linear Power MOSFETs.
Voltages include 500 V, 1000 V and 1200V , while currents range from 17 A to 62 A. These Power
MOSFETs are offered in a number of different packages including the standard TO-247 and a
variety of „plus“ sizes.
These new devices are also compatible with IXYS ISOPLUS™ packages, which provide integral
backside case isolation.
1000
1200
1500
V
500
V
DSS
T
C
I
D(cont)
= 25°C
30
30
30
24
46
46
46
62
62
12
22
22
22
30
30
17
17
A
8
T
J
R
0.20
0.20
0.20
0.30
0.16
0.16
0.16
0.10
0.10
1.30
0.60
0.60
0.60
0.45
0.45
0.99
0.99
5.00
= 25°C
DS(on)
W
10200
10200
10200
11500
11500
13200
13700
2500
7000
7000
7000
2500
7050
7050
7050
8000
8000
7900
C
typ.
pF
iss
240
240
240
160
260
260
260
550
550
155
270
270
270
545
545
270
270
250
typ.
nC
Q
g
1000
1000
1000
1000
1000
1000
1350
1350
typ.
ns
500
500
500
500
600
600
600
500
500
790
t
rr
0.156
0.156
0.156
0.156
R
K/W
0.31
0.31
0.31
0.31
0.18
0.18
0.18
0.31
0.18
0.18
0.18
0.18
0.18
0.18
thJC
400
400
400
400
700
700
700
800
800
400
700
700
700
800
800
700
700
700
P
W
D
X014a
X017a
X019
X014a
X020a
X027a
X015a
X021a
X027a
X014a
X020a
X027a
X015a
X021a
X027a
X020a
X027a
X027a
Fig.
No.
X014a
Weight = 6 g
X015a
Weight = 5 g
X017a
Weight = 5 g
X019
Weight = 5 g
X020a
Weight = 10 g
X021a
Weight = 10 g
X027a
Weight = 30 g miniBLOC
Outline drawings on
pages O-30...O-52
Package style
TO-247AD
TO-268AA
SOT-227B
PLUS247
PLUS264
TO-264
TO-3P
111

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