LTC4413EDD-1#TRPBF Linear Technology, LTC4413EDD-1#TRPBF Datasheet - Page 14

IC IDEAL DIODE DUAL 10-DFN

LTC4413EDD-1#TRPBF

Manufacturer Part Number
LTC4413EDD-1#TRPBF
Description
IC IDEAL DIODE DUAL 10-DFN
Manufacturer
Linear Technology
Datasheet

Specifications of LTC4413EDD-1#TRPBF

Applications
Handheld/Mobile Devices
Fet Type
P-Channel
Number Of Outputs
2
Internal Switch(s)
Yes
Delay Time - On
11µs
Delay Time - Off
2µs
Voltage - Supply
2.5 V ~ 5.5 V
Current - Supply
40µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
10-DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LTC4413EDD-1#TRPBFLTC4413EDD-1
Manufacturer:
LT
Quantity:
10 000
Company:
Part Number:
LTC4413EDD-1#TRPBFLTC4413EDD-1#PBF
Manufacturer:
NEC
Quantity:
521
Company:
Part Number:
LTC4413EDD-1#TRPBF
Manufacturer:
LINEAR
Quantity:
8 000
Company:
Part Number:
LTC4413EDD-1#TRPBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Company:
Part Number:
LTC4413EDD-1#TRPBF
0
LTC4413-1/LTC4413-2
APPLICATIONS INFORMATION
Soft-Start Overvoltage Protection
In the event that a low power external PFET is used for
the external overvoltage protection device, care must be
taken to limit the power dissipation in the external PFET.
The operation of this circuit is identical to the “Automatic
Switchover from a Battery to a Wall Adapter” application
shown on the fi rst page of this data sheet. Here, however,
the ideal diode from INA to INB is disabled by pulling up
on ENBA whenever an overvoltage condition is detected.
This channel is turned-off using a resistor connected to
OVP along with a 5.6V Zener diode, ensuring the abso-
lute maximum voltage at ENBA is not exceeded during
14
ADAPTER
INPUT
WALL
10nF
0.1μF
C2
FDR8508
C1: C0805C106K8PAC
C2: C0403C103K8PAC
C
OUT
R
560k
: C1206C475K8PAC
ENBA
+
BAT
C1
10μF
D1
OPTIONAL
D2
5.6V
STAT IS HIGH WHEN WALL ADAPTER IS
SUPPLYING LOAD CURRENT
OVP IS HIGH WHEN WALL ADAPTER
VOLTAGE > 6V
Figure 7
INA
ENBA
GND
ENBB
INB
LTC4413-2
an overvoltage event. When the overvoltage condition
ends, the OVP voltage drops slowly, depending on the
gate charge of the external PFET. This causes the external
PFET to linger in a high R
sipate a signifi cant amount of heat depending on the load
current. To avoid dissipating heat in the external PFET, this
application delays turning on the ideal diode from INA to
OUTA, until the gate voltage of the external PFET drops
below V
out of the high R
be used on either channel of the LTC4413-2.
IDEAL
IDEAL
OUTB
OUTA
STAT
OVP
OVI
ENBIL
, where the external PFET should safely be
441312 F07
DS(ON)
V
CC
R
470k
STAT
C
4.7μF
OUT
region. This soft-start scheme can
STAT
OVP
TO LOAD
DS(ON)
region where it can dis-
441312fd

Related parts for LTC4413EDD-1#TRPBF