PC81101NSZ0F Sharp Microelectronics, PC81101NSZ0F Datasheet

PHOTOCOUPL TRAN W/SCHOTTKY 4DIP

PC81101NSZ0F

Manufacturer Part Number
PC81101NSZ0F
Description
PHOTOCOUPL TRAN W/SCHOTTKY 4DIP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of PC81101NSZ0F

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
400% @ 5mA
Voltage - Output
70V
Current - Output / Channel
30mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
350mV
Output Type
Transistor with Schottky
Mounting Type
Through Hole
Package / Case
4-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-2167-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PC81101NSZ0F
Manufacturer:
Sharp Microelectronics
Quantity:
1 995
■ Description
■ Features
PC8110xNSZ0F
Series
coupled to a phototransistor built-in schottky barrier
diode.
lead-form option.
1. 4pin DIP package
2. Double transfer mold package (Ideal for Flow
3. High speed response at turn-off time due to built-in
4. High isolation voltage between input and output
5. Lead-free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
PC8110xNSZ0F Series contains an IRED optically
It is packaged in a 4-pin DIP, and SMT gullwing
Input-output isolation voltage(rms) is 5.0kV.
CTR is 50% to 400% at input current of 5mA.
Soldering)
schottky barrier diode (at saturation mode)
(V
iso(rms)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
: 5kV)
1
DIP 4pin
High Speed under High Load Resistance
Photocoupler
■ Agency approvals/Compliance
■ Applications
1. Recognized by UL1577 (Double protection isolation),
2. Package resin : UL flammability grade (94V-0)
1. Home appliances
file No. E64380 (as model No. PC8110)
PC8110xNSZ0F Series
Sheet No.: D2-A03802EN
© SHARP Corporation
Date Jun. 30. 2005

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PC81101NSZ0F Summary of contents

Page 1

PC8110xNSZ0F Series ■ Description PC8110xNSZ0F Series contains an IRED optically coupled to a phototransistor built-in schottky barrier diode packaged in a 4-pin DIP, and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. CTR is 50% to 400% ...

Page 2

Internal Connection Diagram Schottky barrier diode 1 2 ■ Outline Dimensions 1. Through-Hole [ex. PC8110xNSZ0F] Rank mark Anode mark Factory identification mark Date code ±0.5 6.5 ±0.3 7.62 Epoxy resin ±0.1 ...

Page 3

Date code (2 digit) 1st digit Year of production A.D. Mark A.D Mark 1990 A 2002 P 1991 B 2003 R 1992 C 2004 S 1993 D 2005 T 1994 E 2006 U 1995 F 2007 V 1996 H 2008 ...

Page 4

Absolute Maximum Ratings Parameter Symbol Forward current Peak forward current I FM Reverse voltage V R Power dissipation P Collector-emitter voltage V CEO Emitter-collector voltage V ECO Collector current I C Collector power dissipation P C ...

Page 5

... Model Line-up Lead Form Through-Hole Package 100pcs/sleeve 100pcs/sleeve PC81100NSZ0F PC81100NIZ0F PC81101NSZ0F PC81101NIZ0F PC81102NSZ0F PC81102NIZ0F PC81103NSZ0F PC81103NIZ0F Model No. PC81105NSZ0F PC81105NIZ0F PC81106NSZ0F PC81106NIZ0F PC81108NSZ0F PC81108NIZ0F Please contact a local SHARP sales representative to inquire about production status. SMT Gullwing Rank mark 2000pcs/reel PC81100NIP0F with or without ...

Page 6

Fig.1 Forward Current vs. Ambient Temperature − Ambient temperature T Fig.3 Collector Power Dissipation vs. Ambient Temperature 250 200 150 100 50 0 − Ambient temperature T ...

Page 7

Fig.7 Current Transfer Ratio vs. Forward Current 200 180 160 140 120 100 Forward current I F Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 140 120 100 ...

Page 8

Fig.13 Response Time vs. Load Resistance (active region) 100 V = =2mA C T =25˚ 0.1 0.1 1 Load resistance R L Fig.15 Frequency Response =10kΩ L −5 1kΩ −10 ...

Page 9

Design Considerations ● Design guide While operating at I <5.0mA, CTR variation may increase. F Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. The collector-emitter voltage has negative resistance characteristics ...

Page 10

Manufacturing Guidelines ● Soldering Method Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please don't solder more than twice. (˚C) 300 Terminal : 260˚C peak ...

Page 11

Cleaning instructions Solvent cleaning: Solvent temperature should be 45˚C or below Immersion time should be 3 minutes or less Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, ...

Page 12

Package specification ● Sleeve package Package materials Sleeve : HIPS (with anti-static material) Stopper : Styrene-Elastomer Package method MAX. 100pcs of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. The ...

Page 13

Tape and Reel package Package materials Carrier tape : PS Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F Dimensions List A B ±0.3 ±0.1 16.0 7 ±0.1 ±0.05 10.4 ...

Page 14

Important Notices · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for ...

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