TCET1100 Vishay, TCET1100 Datasheet - Page 6

• Manufacturer Part Number: TCET1100
• Description: OPTOCOUPLER PHOTOTRANS 600% 4DIP
• Manufacturer: Vishay

Specifications of TCET1100

• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 50% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Package / Case: 4-DIP (0.300", 7.62mm)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Approval Bodies: VDE, CSA, BSI EN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS
T
Document Number: 83503
Rev. 2.3, 14-Oct-09
amb
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
= 25 °C, unless otherwise specified
96 11862
96 11700
t
t
t
t
p
d
r
on
(= t
100 %
Fig. 7 - Forward Current vs. Forward Voltage
1000
90 %
10 %
300
250
200
150
100
100
d
0.1
50
10
+ t
I
I
0
C
1
F
0
0
r
)
0
0
Phototransistor
IR-diode
T
Coupled device
t
amb
Pulse duration
Delay time
Rise time
Turn-on time
d
t
Fig. 5 - Switching Times
on
t
0.4
r
V
- Ambient Temperature (°C)
F
- Forward Voltage (V)
t
40
p
0.8
t
t
t
t
s
off
f
s
For technical questions, contact:
1.2
(= t
s
80
t
off
+ t
t
f
f
Optocoupler, Phototransistor Output,
)
1.6
Storage time
Fall time
Turn-off time
96 11698
120
t
t
2.0
High Temperature
[e-mail]
Fig. 9 - Collector Dark Current vs. Ambient Temperature
95 11026
95 11025
10 000
1000
100
Fig. 8 - Relative Current Transfer Ratio vs.
2.0
1.5
1.0
0.5
10
0
- 25
1
0
TCET1100, TCET1100G
T
T
amb
V
amb
CE
I
F
Ambient Temperature
- Ambient Temperature (°C)
- Ambient Temperature (°C)
= 0
= 20 V
25
0
Vishay Semiconductors
25
50
75
50
V
I
F
CE
= 5 mA
= 5 V
www.vishay.com
100
75
815