4N28S-TA Lite-On Electronics, 4N28S-TA Datasheet - Page 7

• Manufacturer Part Number: 4N28S-TA
• Description: OPTOISOLATOR W/BASE SMD
• Manufacturer: Lite-On Electronics

Specifications of 4N28S-TA

• Output Type: Transistor with Base
• Input Type: DC
• Package / Case: 6-SMD
• Number Of Channels: 1
• Voltage - Isolation: 500Vrms
• Current Transfer Ratio (min): 10% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 500mV
• Mounting Type: Surface Mount
• Maximum Input Diode Current: 80 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.5 V
• Isolation Voltage: 500 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 4N28STA

BNS-OD-C131/A4
Part No. : 4N27 / 4N28 ( M, S, -TA1 )
CHARACTERISTICS
ELECTRICAL - OPTICAL CHARACTERISTICS
* CTR
TRANSFER
OUTPUT
INPUT
=
I
I
C
F
PARAMETER
×
LITE-ON TECHNOLOGY CORPORATION
100%
* Current Transfer Ratio
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Current
Collector-Emitter
Saturation Voltage
Isolation Resistance
Floating Capacitance
Response Time (Rise)
Response Time (Fall)
Property of LITE-ON Only
SYMBOL MIN. TYP. MAX. UNIT
BV
BV
BV
V
CTR
I
R
CE(sat)
V
C
CEO
C
I
I
t
t
R
C
iso
r
f
CEO
ECO
CBO
F
t
f
5×10
—
—
—
—
30
70
10
—
—
—
—
7
1
10
1×10
1.2
0.1
—
50
—
—
—
—
—
—
1
3
3
11
1.5
0.5
10
—
50
—
—
—
—
—
—
—
—
—
mA
µA
nA
pF
pF
µs
µs
%
V
V
V
V
V
Ω
I
V
V=0, f=1KHz
V
I
I
I
I
I
I
I
V
I
I
DC500V
40 ~ 60% R.H.
V=0, f=1MHz
V
R
F
C
F
E
F
C
F
F
F
C
Page :
=10mA
=0
=0
=0
=10mA
=50mA
L
R
CE
=0.1mA
=10µA
=0.1mA
CE
=2mA
CE
=100Ω
=4V
CONDITIONS
=10V, I
=10V
=10V, I
( Ta = 25°C )
F
C
7 of 10
=0
=2mA