TLP180(F,T) Toshiba, TLP180(F,T) Datasheet - Page 2

• Manufacturer Part Number: TLP180(F,T)
• Description: PHOTOCOUPLER TRANS OUT 6MFSOP-4
• Manufacturer: Toshiba

Specifications of TLP180(F,T)

• Number Of Channels: 1
• Input Type: AC, DC
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (min): 50% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 80V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): ±50mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Surface Mount
• Package / Case: 6-MFSOP (4 Lead)
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 50 % to 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Forward Current: 10 mA
• Maximum Input Diode Current: 10 mA
• Output Device: Phototransistor
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP180(FT)

Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Total package power dissipation
Total package power dissipation derating (Ta ≥ 25°C)
Isolation voltage (AC,1 min., R.H. ≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note 1: Pulse width ≤ 100 μs,f=100 Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Supply voltage
Forward current
Collector current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current detating (Ta≥53°C)
Pulse forward current
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
(Ta = 25°C)
(Note 2)
(Note 1)
Symbol
I
F(RMS)
V
T
IC
opr
CC
ΔP
ΔP
Symbol
I
ΔI
2
F(RMS)
V
V
T
T
BV
T
F
I
CEO
ECO
P
C
P
T
FP
T
I
T
opr
stg
sol
C
C
/ °C
T
Min
−25
j
j
/ °C
/ °C
S
―
―
―
Typ.
16
―
5
1
−55 to 125
−55 to 100
Max
Rating
48
20
10
85
3750
−0.7
−1.5
−2.0
±50
125
150
125
260
200
±1
80
50
7
Unit
mA
mA
°C
V
mW / °C
mW / °C
mA / °C
Vrms
Unit
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V
2009-01-19
TLP180