EPC9001 EPC, EPC9001 Datasheet

EPC9001

Manufacturer Part Number

EPC9001

Description

BOARD DEV FOR EPC1015 40V GAN

Manufacturer

EPC

Datasheet

1.EPC1015.pdf (4 pages)

Specifications of EPC9001

Design Resources

EPC9001 Schematic EPC9001 Gerber Files EPC9001 Bill Of Materials

Main Purpose

Power Management, Half H-Bridge Driver (External FET)

Utilized Ic / Part

EPC1015

Primary Attributes

40V, 15A Max Output GaNFET Capability

Secondary Attributes

GaNFET Driver Circuit Uses 7 ~ 12V

Kit Contents

(2) 917-1009-1-ND - TRANS GAN 40V 33A BUMPED DIE

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Embedded

Other names

917-1010

Current page: 1 of 4
Download datasheet (651Kb)

DATASHEET

EPC1015 – Enhancement Mode Power Transistor

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-

ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-

tron mobility and low temperature coefficient allows very low R

and majority carrier diode provide exceptionally low Q

can handle tasks where very high switching frequency, and low on-time are beneficial as well as

those where on-state losses dominate.

Static Characteristics (T

Dynamic Characteristics (T

Source-Drain Characteristics (T

DSS

DS(ON)

, 33 A

STG

, 40 V

DS(ON)

GS(TH)

DSS

GSS

OSS

RSS

OSS

, 4 mW

ISS

DSS

Drain-to-Source Voltage

Continuous (T

Pulsed (25˚C, Tpulse = 300 µs)

Gate-to-Source Voltage

Operating Temperature

Storage Temperature

Source-Drain Recovery Charge

Gate-Source Forward Leakage

Source-Drain Forward Voltage

PARAMETER

Gate-Source Reverse Leakage

Reverse Transfer Capacitance

Drain-Source On Resistance

Total Gate Charge (V

Drain-to-Source Voltage

Gate Threshold Voltage

Gate to Source Charge

Drain Source Leakage

Gate to Drain Charge

= 25˚C unless otherwise stated)

Output Capacitance

Input Capacitance

= 25˚C, θ

Output Charge

= 25˚C unless otherwise stated)

= 23)

Maximum Ratings

= 5 V)

and zero Q

= 0.5 A, V

DS(ON)

-40 to 125

-40 to 150

TEST CONDITIONS

, while its lateral device structure

= 0 V, I

150

= 20 V, I

= 32 V, V

= 20 V, V

= V

-5

= 5 V, I

. The end result is a device that

= -5 V

, I

= 0 V, T = 125˚C

= 5 V

= 0 V, T = 25˚C

= 500 µA

= 9 mA

= 33 A

= 0 V

˚C

MIN

0.7

EFFICIENT POWER CONVERSION

EPC Power Transistors are supplied only in

passivated die form with solder bumps

Applications

• High Speed DC-DC conversion

• Class D Audio

• Hard Switched and High Frequency Circuits

Benefits

• Ultra High Efficiency

• Ultra Low R

• Ultra low Q

• Ultra small footprint

1100

11.6

18.5

1.75

200

575

TYP

1.5

0.3

1.4

3.2

2.2

3.8

1.8

DS(on)

MAX

400

1.5

2.5

EPC1015

| PAGE 1

UNIT

µA

Related parts for EPC9001

EPC9001 Summary of contents

Page 1

... Q Output Charge OSS Q Source-Drain Recovery Charge RR Source-Drain Characteristics (T = 25˚C unless otherwise stated Source-Drain Forward Voltage SD EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 | , while its lateral device structure DS(ON) and zero Q . The end result is a device that 150 6 -5 -40 to 125 ...

Page 2

... I = 100 2 – Gate to Source Voltage (V) GS Figure 5: Capacitance 1.4 1.2 1 0.8 0.6 0.4 0 – Drain to Source Voltage (V) DS EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 | 1.2 1.4 1.6 1.8 2 4.5 5 5.5 4.5 3 OSS ISS 2.5 RSS GD 1 ...

Page 3

... Dimension (mm) target min (see note (see note) g EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 | Figure 8: Normalized On Resistance Vs Temperature 2.5 3 3.5 -20 Figure 10: Gate Current .02 .018 .016 .014 .012 .01 ...

Page 4

... DIE MARKINGS Die orientation dot Gate Pad bump is under this corner DIE OUTLINE Bottom View Side View RECOMMENDED LAND PATTERN (measurements in µm) EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 | 1015 YYYY Part Part # Number ZZZZ Marking Line 1 EPC1015 1015 ...

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