SI3220PPT0-EVB Silicon Laboratories Inc, SI3220PPT0-EVB Datasheet - Page 16

• Manufacturer Part Number: SI3220PPT0-EVB
• Description: BOARD EVAL W/SI3200 INTERFACE
• Manufacturer: Silicon Laboratories Inc
• Series: ProSLIC®r

Specifications of SI3220PPT0-EVB

• Main Purpose: Interface, Analog Front End (AFE)
• Utilized Ic / Part: Si3220
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Secondary Attributes: -
• Embedded: -
• Primary Attributes: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Si3220/25 Si3200/02
16
Table 10. DC Characteristics (V
(V
Table 11. Switching Characteristics—General Inputs
(V
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output
Voltage
Low Level Output
Voltage
SDITHRU internal pullup
resistance
Relay Driver Source Imped-
ance
Relay Driver Sink Impedance
Input Leakage Current
Parameter
Rise Time, RESET
RESET Pulse Width, GCI Mode
RESET Pulse Width, SPI Daisy Chain Mode
Notes:
DD
DD
1. All timing (except Rise and Fall time) is referenced to the 50% level of the waveform. Input test levels are V
2. The minimum RESET pulse width assumes the SDITHRU pin is tied to ground via a pulldown resistor no greater than
, V
, V
DD1
DD1
0.4 V, V
10 kΩ per device.
– V
– V
DD4
DD4
IL
=
=
=
0.4 V. Rise and Fall times are referenced to the 20% and 80% levels of the waveform.
3.13 to 3.47 V, T
3.13 to 5.25 V, T
2
Symbol
A
A
R
V
V
V
R
V
=
=
OUT
I
DD
OH
OL
IH
IN
L
IL
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade, C
, V
DD1
GPOa/b, TRD1a/b, TRD2a/b:
–V
BATSELa/b, RRDa/b,
V
V
DD4
DD1
DD1
DTX, SDO, INT,
Test Condition
I
Rev. 1.3
Symbol
IO < 28 mA
IO < 85 mA
I
O
SDITHRU:
–V
–V
=
I
O
O
= –40 mA
3.3 V)
= –4 mA
t
t
DD4
DD4
t
= 4 mA
rl
rl
r
= 3.13 V
= 3.13 V
1
Min
500
—
6
0.7 x V
V
DD
Min
35
—
—
—
—
—
—
Typ
– 0.6
—
—
—
DD
L
Typ
=
50
63
11
—
—
—
—
—
—
20 pF)
Max
—
—
5
0.3 x V
Max
5.25
0.72
±10
0.4
—
—
—
—
IH
DD
=
Unit
ns
ns
µs
V
Unit
DD
kΩ
µA
V
V
V
V
Ω
Ω
–