R0K42215RS000BE Renesas Electronics America, R0K42215RS000BE Datasheet - Page 5

• Manufacturer Part Number: R0K42215RS000BE
• Description: KIT DEV RSK-H8S/2215R
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of R0K42215RS000BE

• Contents: CPU Board, LCD Display Module, E8 Emulator, Cable, QuickStart Guide and CD-ROM
• Processor: H8S/2215R
• For Use With/related Products: H8S/2215R
• Lead Free Status / RoHS Status: Not applicable / Not applicable

M O N O S F l a s h t e c h n o l o g y
M O N O S F l a s h t e c h n o l o g y :
f a s t a n d l o w c o s t !
Renesas now has over 12 years experience producing
embedded Flash MCU’s. We have shipped 800 million
pieces so far, at a current run rate of almost 10 million
pieces per month, and no single piece has shown a data
retention failure yet. Renesas has a 25% market share of
the embedded Flash MCU market.
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MONOS Flash
World‘s fastest embedded Flash Technology
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•
•
•
12.5ns read access time now, 10ns soon.
Nitride stops electrons from leaking off the floating
gate in case of defects.
Hence the cell can be made small whilst it is still highly
reliable.
Small means FAST and cost effective. It also enables BIG
(currently up to 2 MByte) Flash modules.
Flash module area
100%
H8/3052F
(0.35µm)
2000
C o m p a r i s o n o f 5 1 2 K B - F l a s h M C U
H8/3069RF
(0.18µm)
52%
2002
Metal-Oxide-Nitride-Oxide-Silicon (MONOS) Flash is our
latest generation embedded Flash technology. At just
10ns, it offers the fastest access time of any Flash tech-
nology today. And the flash cells are small, so MONOS
Flash is ideal to create fast microcontrollers at best prices.
Just like all embedded MONOS Flash H8 devices, the
H8S/2378BF features a build-in API software that allows
user code to make function calls to control the Flash. This
method is reliable and user friendly. The device also has a
user boot mode (in addition to the build-in normal boot
mode), associated with additional 8KB Flash, that allows
customers to define their own boot mode.
(0.18µm MONOS)
H8/2378F
22%
2004
M etal
O xide
N itride
O xide
S ilicon