ADIS16255/PCBZ Analog Devices Inc, ADIS16255/PCBZ Datasheet - Page 4

• Manufacturer Part Number: ADIS16255/PCBZ
• Description: BOARD EVAL FOR ADIS16255
• Manufacturer: Analog Devices Inc
• Series: iMEMS®, iSensor™r

Specifications of ADIS16255/PCBZ

• Sensor Type: Gyroscope, 1 Axis (Yaw Rate)
• Sensing Range: ±80°/sec, ±160°/sec, ±320°/sec
• Interface: SPI Serial
• Sensitivity: 0.018°/sec/LSB
• Voltage - Supply: 4.75 V ~ 5.25 V
• Embedded: No
• Utilized Ic / Part: ADIS16255
• For Use With: ADISUSBZ - KIT EVAL ADIS W/SOFTWARE USBADISEVALZ - KIT PC EVALUATION W/SOFTWARE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ADIS16250/ADIS16255
Parameter
DAC OUTPUT
LOGIC INPUTS
DIGITAL OUTPUTS
SLEEP TIMER
START-UP TIME
FLASH MEMORY
CONVERSION RATE
POWER SUPPLY
1
2
3
4
5
6
ADIS16255 characterization data represents ±4σ to fall within the ±1% limit.
The sensor is capable of ±600°/sec, but the specifications herein are for ±320°/sec only.
The RST pin has an internal pull-up.
Guaranteed by design.
Endurance is qualified as per JEDEC Standard 22 Method A117 and measured at −40°C, +25°C, +85°C, and +125°C.
Retention lifetime equivalent at junction temperature (T
Resolution
Relative Accuracy
Differential Nonlinearity
Offset Error
Gain Error
Output Range
Output Impedance
Output Settling Time
Input High Voltage, V
Input Low Voltage, V
Logic 1 Input Current, I
Logic 0 Input Current, I
Input Capacitance, C
Output High Voltage, V
Output Low Voltage, V
Timeout Period
Initial
Sleep Mode Recovery
Endurance
Data Retention
Minimum Conversion Time
Maximum Conversion Time
Maximum Throughput Rate
Minimum Throughput Rate
Operating Voltage Range, V
Power Supply Current
All except RST
RST
3
5
6
4
INL
IN
INH
OL
INH
INL
OH
CC
Conditions
5 kΩ/100 pF to GND
For Code 101 to Code 4095
Internal 3.3 V Interface
For CS signal when used to wake up from sleep mode
V
V
Internal 3.3 V Interface
I
I
T
Normal mode at 25°C
Fast mode at 25°C
Sleep mode at 25°C
SOURCE
SINK
IH
IL
J
= 55°C
= 0 V
= 3.3 V
= 1.6 mA
= 1.6 mA
J
) 55°C, as per JEDEC Standard 22 Method A117. Retention lifetime decreases with junction temperature.
Rev. D | Page 4 of 20
2.0
2.4
0.5
10,000
20
4.75
Min
Typ
12
4
1
±5
±0.5
0 to 2.5
2
10
±0.2
−40
−1
10
160
2.5
3.906
7.75
256
0.129
5.0
18
44
425
0.8
0.55
±10
−60
0.4
128
5.25
Max
Bits
LSB
LSB
mV
%
V
Ω
μs
V
V
V
μA
μA
mA
pF
V
V
sec
ms
ms
Cycles
Years
ms
sec
SPS
SPS
V
mA
mA
μA
Unit