TLP3122(TP,F) Toshiba, TLP3122(TP,F) Datasheet - Page 2

• Manufacturer Part Number: TLP3122(TP,F)
• Description: PHOTORELAY MOSFET OUT 1A 4-SOP
• Manufacturer: Toshiba
• Series: TLP3122r

Specifications of TLP3122(TP,F)

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-state Resistance: 250 mOhm
• Load Current: 1A
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP
• Input Type: DC
• Input Voltage (max): 1.3V
• Output Voltage (max): 60V
• Input Current (max): 50mA
• Output Current: 1A
• Circuit Arrangement: 1 Form A
• Package Type: SOP
• Output Device: MOSFET
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -20C to 85C
• Operating Temperature Classification: Commercial
• Rad Hardened: No
• Load Voltage Rating: 60 V
• Load Current Rating: 1 A
• Contact Form: 1 Form A
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 20 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP3122FTR

Absolute Maximum Ratings
Recommended Operating Conditions
Individual Electrical Characteristics
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H. < = 60%) (Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) : Device considered a two-terminal device : LED side pins shorted together, and detector side pins shorted
Supply voltage
Forward current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current derating (Ta > = 25°C)
Reverse voltage
Junction temperature
Off-state output terminal voltage
On-state current
On-state current derating (Ta > = 50°C)
Junction temperature
Forward voltage
Reverse current
Capacitance
Off-state current
Capacitance
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
together.
Characteristic
Characteristic
(Ta = 25°C)
Symbol
C
I
OFF
V
C
OFF
I
R
F
T
Symbol
(Ta = 25°C)
V
T
I
V
V = 0, f = 1 MHz
V
V = 0, f = 1 MHz
F
I
opr
DD
F
R
OFF
= 10 mA
= 5 V
ΔI
Symbol
ΔI
V
ON
T
T
BV
= 60 V
T
I
V
OFF
F
ON
I
T
T
opr
stg
sol
F
/°C
R
2
j
j
S
/°C
Test Condition
Min.
25
⎯
5
−40~125
Typ.
−20~85
Rating
10
⎯
⎯
−13.3
1500
−0.5
125
125
260
50
60
5
1
Max.
48
20
60
mA/°C
mA/°C
Vrms
Unit
mA
°C
°C
°C
°C
°C
V
V
A
Unit
mA
°C
Min.
V
1.0
⎯
⎯
⎯
⎯
Typ.
1.15
0.2
⎯
15
90
Max.
2007-10-01
100
1.3
TLP3122
10
⎯
⎯
Unit
μA
pF
nA
pF
V