2SB1198 UTC, 2SB1198 Datasheet
2SB1198
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2SB1198 Summary of contents
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... UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. FEATURES *High breakdown voltage : BV = -80V CEO *Low V (sat (sat)= -0.2V (Typ (Ic/I = -0.5A/-50mA) B ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage ...
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... UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CURVES Figure 1.Grounded Emitter Propagation Characteristics - a=100℃ -1 -500m T a=25℃ -200m -100m T a= -25℃ -50m -20m -10m -5m -2m -1m 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base to Emitter Voltage:V Figure 3.DC Current Gain vs.Collector Current 1000 500 T a=100℃ ...
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... UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR Figure 7.Collector-emitter Saturation Voltage vs.Collector Current (IV) - Ta=100℃ -500m Ta= 25℃ -200m Ta= -25℃ -100m -50m -20m -10m -1 -100 -10 Collector Current : Ic(mA) Figure9.Collector Output Capacitance vs.Collector-Base Voltage Emitter Input Capacitance vs.Emitter-Base Voltage 1000 500 ...