2SC4027 UTC, 2SC4027 Datasheet

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2SC4027

Manufacturer Part Number
2SC4027
Description
HIGH-VOLTAGE SWITCHING APPLICATIONS
Manufacturer
UTC
Datasheet

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UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
APPLICATIONS
FEATURES
*High voltage and large current capacity.
*Fast switching time.
APPLICATION
*Converters, inverters, color TV audio output.
*Complementary to 2SA1522.
ABSOLUTE MAXIMUM RATINGS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
UTC
PARAMETER
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD.
Tc=25°C
SYMBOL
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
(Ta=25℃)
h
I
I
h
CE(sat)
BE(sat)
C
CBO
EBO
t
t
FE1
FE2
f
stg
on
t
T
ob
(Ta=25℃,unless otherwise specified)
f
www.DataSheet4U.com
SYMBOL
V
V
V
Tstg
Icp
Ic=10A,I
Ic=1mA,R
I
V
V
V
V
Ic=500mA,I
Ic=500mA,I
V
V
See specified Test Circuit
Pc
CBO
CEO
EBO
Ic
Tj
E
CB
EB
CE
CE
CE
CB
=10µA,Ic=0
=120V,I
=4V,Ic=0
=5V,Ic=100mA
=5V,Ic=10mA
=10V,Ic=50mA
=-10V,f=1MHz
TEST CONDITION
E
=0
BE
B
B
E
=∞
=50mA
=0
=50mA
1:BASE 2: COLLECTOR 3: EMITTER
RATINGS
-55 ~+150
180
160
150
1.5
2.5
1
15
6
1
MIN
180
160
100
80
6
TO-252
TYP MAX UNIT
0.13
0.85
120
1.2
12
60
80
QW-R209-018,A
UNIT
0.45
°C
°C
W
400
V
V
V
A
A
1.0
1.0
1.2
MHz
µA
µA
pF
µs
µs
µs
V
V
V
V
V
1

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2SC4027 Summary of contents

Page 1

... UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES *High voltage and large current capacity. *Fast switching time. APPLICATION *Converters, inverters, color TV audio output. *Complementary to 2SA1522. ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current ...

Page 2

... UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF h FE1 RANK R h 100~200 FE SWITCHING TIME TEST CIRCUIT INPUT PW=20μs D.C.≦1% 50Ω 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 Collector to Emitter Voltage 1.6 V =5V CE 1.2 0.8 0 0.2 0.4 0.6 0.8 Collector to Emitter Voltage, V UTC UNISONIC TECHNOLOGIES CO., LTD. S 140~280 I B1 ...

Page 3

... UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR f - 100 0. 0 Collector Current, Ic (A) V (sat)- 1000 100 7 Ta=75℃ 25℃ -25℃ 0. 0 Collector Current =2. =1.5A C 1.0 5 ...

Page 4

... UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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