hmc659 Hittite Microwave Corporation, hmc659 Datasheet

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hmc659

Manufacturer Part Number
hmc659
Description
Power Amplifier Chip, Dc - 15 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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3 - 122
3
Typical Applications
The HMC659 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
Parameter
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
A
v00.0807
= +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Min.
16.1
23
Order On-line at www.hittite.com
DC - 6
0.013
±0.5
25.5
Typ.
19.1
300
2.5
19
18
26
35
Max.
Features
P1dB Output Power: +26.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.115 x 1.630 x 0.1 mm
General Description
The HMC659 is a GaAs MMIC PHEMT Distributed
Power Amplifi er die which operates between DC and
15 GHz. The amplifi er provides 19 dB of gain,
+35 dBm output IP3 and +26.5 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +8V supply. Gain fl atness is excellent at ±0.5
dB from DC to 10 GHz making the HMC659 ideal for
EW, ECM, Radar and test equipment applications.
The HMC659 amplifi er I/Os are internally matched
to 50 ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of mini-
mal length 0.31 mm (12 mils).
POWER AMPLIFIER, DC - 15 GHz
Min.
15.5
24
6 - 11
±0.15
0.018
18.5
26.5
Typ.
300
17
17
27
32
2
Max.
GaAs PHEMT MMIC
Min.
14.8
22.5
11 - 15
0.025
HMC659
±0.6
Typ.
17.8
300
15
15
25
27
29
3
Max.
dB/ °C
Units
GHz
dBm
dBm
dBm
dBc
mA
dB
dB
dB
dB

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hmc659 Summary of contents

Page 1

... IP3 and +26.5 dBm of output power gain compression while requiring 300 mA from a +8V supply. Gain fl atness is excellent at ±0.5 dB from GHz making the HMC659 ideal for EW, ECM, Radar and test equipment applications. The HMC659 amplifi er I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip- Modules (MCMs) ...

Page 2

... Noise Figure vs. Temperature Order On-line at www.hittite.com HMC659 GaAs PHEMT MMIC +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C FREQUENCY (GHz) +25C +85C ...

Page 3

... Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg Gain P1dB 12 7.5 8 Vdd (V) Order On-line at www.hittite.com HMC659 GaAs PHEMT MMIC +25C +85C -55C 0 2.5 5 7.5 10 12.5 FREQUENCY (GHz) 7.5V 8.0V 8. OUTPUT POWER (dBm) ...

Page 4

... Power Dissipation - Typical Supply Current vs. Vdd Vdd (V) +7.5 +8.0 +8.5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Order On-line at www.hittite.com HMC659 GaAs PHEMT MMIC Pout Gain PAE INPUT POWER (dBm) Max Pdis @ 85C 2 GHz 12 GHz - ...

Page 5

... Alternate 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE [2] 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 Order On-line at www.hittite.com HMC659 GaAs PHEMT MMIC ...

Page 6

... Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 POWER AMPLIFIER GHz Description This pad is DC coupled and matched capacitor per application circuit herein. capacitor per application circuit herein. capacitor per application circuit herein. application note. Order On-line at www.hittite.com HMC659 GaAs PHEMT MMIC Interface Schematic 3 - 127 3 ...

Page 7

... NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 3 - 128 v00.0807 POWER AMPLIFIER GHz Order On-line at www.hittite.com HMC659 GaAs PHEMT MMIC ...

Page 8

... Thick GaAs MMIC 0.076mm 0.102mm (0.004”) Thick GaAs MMIC 0.076mm 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC659 GaAs PHEMT MMIC Wire Bond (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1 ...

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