IRF5810 International Rectifier, IRF5810 Datasheet
IRF5810
Specifications of IRF5810
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IRF5810 Summary of contents
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... This Dual TSOP-6 package is ideal for applications where printed circuit board space premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and R reduction enables an increase in current-handling capability ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP -10V -7.0V -4.5V -3.0V -2.5V -1.8V 10 -1.5V BOTTOM -1.2V 1 -1.2V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100.0 ...
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1MHz iss rss 800 oss iss 600 400 200 C oss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 ...
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-2.9A 0.05 0.04 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic ...
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Temperature ( °C ) Fig 15. Threshold Voltage Vs. Temperature www.irf.com -250µ 0.0001 ...
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8 www.irf.com ...
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... Notes : T his part marking information applies to devices produced after 02/26/2001 PART NUMBER PART NUMB ER CODE REFERENCE SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 L = IRF5804 M = IRF5803 N = IRF5820 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR Y 2001 ...