IRF7705 International Rectifier, IRF7705 Datasheet

MOSFET P-CH 30V 8A 8-TSSOP

IRF7705

Manufacturer Part Number
IRF7705
Description
MOSFET P-CH 30V 8A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7705

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
88nC @ 10V
Input Capacitance (ciss) @ Vds
2774pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7705

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7705TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
l
l
l
l
l
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.2mm)
Available in Tape & Reel
@T
@T
T
STG
C
C
C
C
®
= 25°C
= 70°C
= 25°C
= 70°C
power MOSFETs from International Rectifier
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
provides the de-
GS
GS
ƒ
@ -10V
@ -10V
2
3
4
1
1 = D
4 = G
2 = S
3 = S
V
-30V
DSS
G
D
S
HEXFET
R
8 = D
7 = S
5 = D
6 = S
DS(on)
-55 to + 150
18 @V
30 @V
Max.
8
7
6
5
Max.
0.012
0.96
-8.0
-6.0
± 20
83
-30
-30
1.5
max (m
GS
GS
®
IRF7705
= -10V
= -4.5V
Power MOSFET
TSSOP-8
PD - 94001A
-8.0A
-6.0A
Units
Units
I
W/°C
°C/W
D
W
°C
V
A
V
1
06/05/01

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IRF7705 Summary of contents

Page 1

... Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com V DSS -30V provides the de -10V GS @ -10V GS ƒ 94001A IRF7705 ® HEXFET Power MOSFET R max (m I DS(on -10V -8. -4.5V -6. TSSOP-8 Max. Units -30 V -8.0 -6.0 ...

Page 2

... IRF7705 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM -2.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V DS 0.0 -60 -40 -20 4.0 4.5 Fig 4. Normalized On-Resistance IRF7705 VGS TOP -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V -2.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) -8. ...

Page 4

... IRF7705  4000 1MHz iss rss 3200 oss iss 2400 1600  800 C oss  C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100  ° 150 0.1 0.2 0.4 0.6 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED ds 12 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 125 150 10% ° 90 Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRF7705 D.U. µ d(off thJA A 10 ...

Page 6

... IRF7705 0.08 0.07 0.06 0.05 0. -8.0A 0.03 0.02 0.01 2.0 3.0 4.0 5.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.06 0.04 0.02 0.00 7.0 8.0 9.0 10.0 0 Fig 13. Typical On-Resistance Vs. ...

Page 7

... ABLE 2 WORK YEAR Y WEEK W 2001 2002 2003 1994 1995 E 1996 F 1997 G 1998 H 1999 J 2000 8LT SSOP (MO-153AA) Ø 13" FEED DIRECT ION NOT ES APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541. IRF7705 16mm 7 ...

Page 8

... IRF7705 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. ...

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