IRF9610S Vishay, IRF9610S Datasheet

MOSFET P-CH 200V 1.8A D2PAK

IRF9610S

Manufacturer Part Number
IRF9610S
Description
MOSFET P-CH 200V 1.8A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF9610S

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9610S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9610S
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRF9610S
Manufacturer:
SEC
Quantity:
239
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. I
c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91081
S09-0017-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 1.8 A, dI/dt ≤ 70 A/µs, V
G D
(Ω)
D
S
2
PAK (TO-263)
a
b
V
DD
GS
≤ V
= - 10 V
d
G
DS
, T
P-Channel MOSFET
d
Single
J
- 200
≤ 150 °C.
7.0
4.0
11
S
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
3.0
at - 10 V
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF9610SPbF
SiHF9610S-E3
IRF9610S
SiHF9610S
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
I
P
, T
device
I
DM
DS
GS
D
D
stg
IRF9610S, SiHF9610S
design,
- 55 to + 150
LIMIT
0.025
- 200
± 20
- 1.8
- 1.0
- 7.0
0.16
- 5.0
300
3.0
20
low
Vishay Siliconix
c
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
°C
W
V
A
and
1

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IRF9610S Summary of contents

Page 1

... D PAK (TO-263) IRF9610SPbF SiHF9610S-E3 IRF9610S SiHF9610S = 25 °C, unless otherwise noted ° 100 ° ° °C A for 10 s ≤ 150 ° IRF9610S, SiHF9610S Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V - 200 DS V ± 1 1 7.0 DM 0.16 0.025 3.0 dV/dt - 5.0 ...

Page 2

... IRF9610S, SiHF9610S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... S09-0017-Rev. A, 19-Jan-09 - 2.40 - 1. 91081_03 x R DS(on) max. D(on 91081_04 Single Pulse (Transient Thermal Impedence Square Wave Pulse Duration (s) 1 IRF9610S, SiHF9610S Vishay Siliconix 10 µs Pulse Test 0. Drain-to-Source Voltage ( Fig Typical Saturation Characteristics 2 10 Operation in this area limited DS(on 100 ° ...

Page 4

... IRF9610S, SiHF9610S Vishay Siliconix 2.0 80 µs Pulse Test V > max. DS D(on) DS(on) 1.6 1.2 0.8 0.4 0 0.48 - 0.96 - 1.44 I Drain Current ( 91081_06 Fig Typical Transconductance vs. Drain Current - 10.0 - 5.0 - 2.0 - 1.0 ° 150 C J ° 0 0.2 - 0.1 - 2.0 - 3.2 - 4.4 - 5.6 ...

Page 5

... T , Case Temperature (°C) 91081_13 C Fig Maximum Drain Current vs. Case Temperature Document Number: 91081 S09-0017-Rev. A, 19-Jan- 91081_14 Fig Power vs. Temperature Derating Curve 125 150 IRF9610S, SiHF9610S Vishay Siliconix 100 120 T , Case Temperature (°C) C Vary t to obtain p required D.U. ...

Page 6

... IRF9610S, SiHF9610S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 17a - Switching Time Test Circuit t t d(on Fig. 17b - Switching Time Waveforms www.vishay.com d(off Charge Fig. 18a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9610S, SiHF9610S Vishay Siliconix + + P. www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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