IRFR9110TR Vishay, IRFR9110TR Datasheet

MOSFET P-CH 100V 3.1A DPAK

IRFR9110TR

Manufacturer Part Number
IRFR9110TR
Description
MOSFET P-CH 100V 3.1A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR9110TR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91279
S-82992-Rev. B, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
DS
D
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 4.0 A, dI/dt ≤ 75 A/µs, V
= - 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
G
= 25 °C, L = 21 mH, R
D S
c
DPAK (TO-252)
IRFR9110PbF
SiHFR9110-E3
IRFR9110
SiHFR9110
a
a
V
b
DD
GS
≤ V
= - 10 V
e
DS
G
, T
e
P-Channel MOSFET
Single
J
- 100
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
≤ 150 °C.
8.7
2.2
4.1
G
= 25 Ω, I
S
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
1.2
DPAK (TO-252)
IRFR9110TRLPbF
SiHFR9110TL-E3
IRFR9110TRL
SiHFR9110TL
at - 10 V
AS
T
= - 3.1 A (see fig. 12).
T
A
for 10 s
C
= 25 °C
= 25 °C
T
T
C
C
a
a
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9110, SiHFR9110)
• Straight Lead (IRFU9110, SiHFU9110)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU Series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
a
a
SYMBOL
DPAK (TO-252)
IRFR9110TRPbF
SiHFR9110T-E3
IRFR9110TR
SiHFR9110T
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
a
a
design,
a
a
- 55 to + 150
LIMIT
0.020
- 100
260
± 20
- 3.1
- 2.0
0.20
- 3.1
- 5.5
- 12
140
2.5
2.5
25
low
Vishay Siliconix
d
IPAK (TO-251)
IRFU9110PbF
SiHFU9110-E3
IRFU9110
SiHFU9110
on-resistance
www.vishay.com
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFR9110TR Summary of contents

Page 1

... 100 ° ° °C A for Ω 3.1 A (see fig. 12 ≤ 150 ° Vishay Siliconix device design, low on-resistance DPAK (TO-252) IPAK (TO-251) a IRFR9110TRPbF IRFU9110PbF a SiHFR9110T-E3 SiHFU9110-E3 a IRFR9110TR IRFU9110 a SiHFR9110T SiHFU9110 SYMBOL LIMIT V - 100 DS V ± 3 2 0.20 0.020 E 140 3 2 2.5 dV/ ...

Page 2

... IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91279 S-82992-Rev. B, 12-Jan-09 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 = 25 °C C Fig Normalized On-Resistance vs. Temperature = 150 °C C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

Page 4

... IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91279 S-82992-Rev. B, 12-Jan-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91279 S-82992-Rev. B, 12-Jan-09 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) ...

Page 6

... IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D ...

Page 7

... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91279. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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