MGFC36V3436 MITSUBISHI [Mitsubishi Electric Semiconductor], MGFC36V3436 Datasheet
MGFC36V3436
Manufacturer Part Number
MGFC36V3436
Description
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
1.MGFC36V3436.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MGFC36V3436
Manufacturer:
MITSUBISHI
Quantity:
5 000
DESCRIPTION
The MGFC36V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
High power gain
High power added efficiency
Low distortion [item -51]
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital ratio communication
QUALITY GRADE
RECOMMENDED BIAS CONDITIONS
ABSOLUTE MAXIMUM RATINGS
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
*1 : item -51,2 tone test,Po=25dBm Single Carrier Level,f=3.6GHz,delta f=5MHz
*2 : Channel-case
IG
VGS(off)
Rth(ch-c)
Symbol
P.A.E.
IDSS
P1dB
IM3
GLP
Symbol
P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz
GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz
P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
IM3=-45dBc(Typ.) @Po=25dBm S.C.L.
VDS = 10 (V)
ID = 1.2 (A)
RG=100 (ohm)
VGDO
gm
ID
VGSO
PT
Tstg
IGR
IGF
Tch
ID
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
Drain current
Power added efficiency
3rd order IM distortion
Thermal resistance
Parameter
Parameter
*2
*1
*1
delta Vf method
VDS = 3V , VGS = 0V
VDS = 3V , ID = 1.1A
VDS = 3V , ID = 10mA
-65 / +175
Ratings
3.75
175
-15
-15
-10
21
25
(Ta=25deg.C)
(Ta=25deg.C)
VDS=10V, ID(RF off)=1.2A, f=3.4 - 3.6GHz
Test conditions
deg.C
deg.C
Unit
mA
mA
W
V
V
A
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
OUTLINE DRAWING
N
I
M
2
N
I
M
2
2
.
0
-
/
+
9
.
2
1
4
.
0
-
/
+
5
.
4
GF-8
6
.
1
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
(2)
2
.
0
MGFC36V3436
MITSUBISHI SEMICONDUCTOR <GaAs FET>
< Keep safety first in your circuit designs! >
21.0 +/-0.3
17.0 +/-0.2
12.0
10.7
(1)
Min.
-42
(3)
35
11
Unit : millimeters
-
-
-
-
-
-
0.6 +/-0.15
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Limits
Typ.
-45
1.1
36
12
32
1
5
-
-
(2)
R-1.6
1
.
0
Max.
3.75
-4.5
1.8
6
-
-
-
-
-
18-Sep-'98
2
.
0
-
/
+
6
.
2
3
.
1
1
deg.C/W
dBm
Unit
dBc
dB
%
A
A
S
V
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MGFC36V3436 Summary of contents
Page 1
... DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P ...
Page 2
... MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 Po,PAE vs. Pin 40 VDS=10( IDS=1.2(A) f=3.5(GHz PAE INPUT POWER Pin (dBm) S12 S22 Magn ...