MW4IC2020 MOTOROLA [Motorola, Inc], MW4IC2020 Datasheet
MW4IC2020
Available stocks
Related parts for MW4IC2020
MW4IC2020 Summary of contents
Page 1
... The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage ( Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA ...
Page 2
... Deviation from Linear Phase in 30 MHz Bandwidth @ P Delay @ Including Output Matching out Part to Part Phase Variation @ out (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. MW4IC2020MBR1 MW4IC2020GMBR1 2 Symbol Symbol Stage 1 Stage 2 Stage 3 = 25°C unless otherwise noted) C ...
Page 3
... Typ Max Unit = 80 mA 240 mA DQ1 DQ2 DQ3 — 30 — dB — 5 — % — — dBc — — dBc — — dBc = 26 Vdc mA, DD DQ1 — 29 — dB — 15 — % — 1 — % rms — — dBc — — dBc MW4IC2020MBR1 MW4IC2020GMBR1 3 ...
Page 4
... Z3 0.345″ x 0.236″ Microstrip Z4 0.327″ x 0.087″ Microstrip Z5 0.271″ x 0.087″ Microstrip Figure 1. MW4IC2020MBR1(GMBR1) Test Circuit Schematic Table 1. MW4IC2020MBR1(GMBR1) Test Circuit Component Designations and Values Part C1, C2 µ Tantalum Capacitors C4 220 nF Chip Capacitor (1206) C5, C6, C8 6.8 pF 100B Chip Capacitors C7 0 ...
Page 5
... Freescale Semiconductor, Inc Figure 2. MW4IC2020MBR1(GMBR1) Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, MW4IC2020 Rev C11 C12 C10 to: www.freescale.com C14 C13 GND MW4IC2020MBR1 MW4IC2020GMBR1 ...
Page 6
... DQ3 f = 1960 MHz (CW η 0 OUTPUT POWER (WATTS) AVG. out Figure 6. Power Gain and Drain Efficiency versus Output Power MW4IC2020MBR1 MW4IC2020GMBR1 6 TYPICAL CHARACTERISTICS G ps IRL η Vdc (PEP) D out = 80 mA 200 mA 300 mA DQ2 DQ3 IMD 1850 ...
Page 7
... FREQUENCY (MHz 85_C C = 230 mA 230 mA DQ2 DQ3 25_C −30_C 1 10 100 P , OUTPUT POWER (WATTS) AVG. out Output Power = 230 mA 230 mA DQ2 DQ3 −30_C T = 25_C C 85_C 85_C 25_C −30_C 1 10 100 P , OUTPUT POWER (WATTS) AVG. out versus Output Power MW4IC2020MBR1 MW4IC2020GMBR1 7 ...
Page 8
... Freescale Semiconductor, Inc. 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 90 Figure 14. MTTF Factor versus Junction Temperature MW4IC2020MBR1 MW4IC2020GMBR1 8 TYPICAL CHARACTERISTICS 3rd Stage 2nd Stage 1st Stage 100 110 120 130 140 150 160 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ± ...
Page 9
... DQ2 DQ1 out load MHz Ω Ω 1805 40.00 + j6.50 8.75 - j1.42 1842 40.00 + j2.00 7.00 - j2.70 1880 40.00 - j1.50 5.90 - j2.97 1930 40.00 - j1.80 5.46 - j3.20 1960 40.00 - j2.10 4.30 - j3.35 1990 40.00 - j2.60 4.45 - j3.30 = Device input impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Output Device Matching Under Test Network load Go to: www.freescale.com MW4IC2020MBR1 MW4IC2020GMBR1 9 ...
Page 10
... Freescale Semiconductor, Inc PIN ONE INDEX aaa DATUM H PLANE c1 SEATING C PLANE Y E2 MW4IC2020MBR1 MW4IC2020GMBR1 10 PACKAGE DIMENSIONS aaa aaa aaa 10X aaa ZONE "J" ...
Page 11
... BSC 1.37 BSC e1 .040 BSC 1.02 BSC .224 BSC 5.69 BSC e2 e3 .150 BSC 3.81 BSC r1 .063 .068 1.6 1.73 ° ° ° ° aaa .004 .10 MW4IC2020MBR1 MW4IC2020GMBR1 11 ...
Page 12
... E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MW4IC2020MBR1 MW4IC2020GMBR1 ◊ 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N ...