TC1301 Transcom, TC1301 Datasheet

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TC1301

Manufacturer Part Number
TC1301
Description
Low Noise and Medium Power GaAs FETs
Manufacturer
Transcom
Datasheet

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TC1301
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SYNERGY
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TC1301B-APAVMF
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FEATURES
* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
Low Noise Figure:
NF = 0.8 dB Typical at 12 GHz
High Associated Gain:
Ga = 10 dB Typical at 12 GHz
High Dynamic Range:
1 dB Compression Power P
Breakdown Voltage:
Lg = 0.25 m, Wg = 600 m
All-Gold Metallization for High Reliability
100 % DC Tested
(1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
BV
Symbol
BV
P
I
NF
R
G
V
G
DSS
g
1dB
The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond
pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
DGO
m
th
a
L
P
DGO
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point , f = 12GHz
V
Linear Power Gain, f = 12GHz
V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
9 V
DS
DS
= 6 V, I
= 6 V, I
DS
DS
= 80 mA
= 80 mA
DS
= 4 V, I
DS
DS
DS
-1
= 4 V, I
Low Noise and Medium Power GaAs FETs
= 2 V, I
= 2 V, V
th
= 24 dBm at 12 GHz
DS
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
CONDITIONS
= 50 mA, f = 12GHz
DS
D
= 50 mA, f = 12GHz
GS
= 1.2 mA
DGO
DS
= 0 V
= 2 V, V
=0.3 mA
A
=25 C)
Phone: 886-6-5050086
GS
= 0 V
P 1 / 6
PHOTO ENLARGEMENT
MIN
10
9
9
Fax: 886-6-5051602
-1.0*
TYP
180
200
0.8
10
24
11
12
22
REV.2_04/12/2004
TC1301
MAX
1.0
UNIT
Volts
Volts
dBm
mA
mS
C/W
dB
dB
dB

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TC1301 Summary of contents

Page 1

... R Thermal Resistance th * For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement (1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. ...

Page 2

... TC1301 ABSOLUTE MAXIMUM RATINGS (T Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS I Drain Current DS I Gate Current Input Power Continuous Dissipation T www.DataSheet4U.com T Channel Temperature CH T Storage Temperature STG CHIP DIMENSIONS S TRANSCOM, INC., 90 Dasoong 7 Web-Site: www.transcominc.com.tw = Rating 7 DSS ...

Page 3

... Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC1301 REV.2_04/12/2004 Mag Max Swp Max 0.1 18 GHz 0 -180 S12 0.01 Swp Min Per Div 2 GHz Swp Max 18GHz S22 ...

Page 4

... TC1301 TYPICAL SCATTERING PARAMETERS ( www.DataSheet4U.com Mag Max 15 -180 5 Per Div FREQUENCY (GHz The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7 Web-Site: www.transcominc.com.tw =25 C) ...

Page 5

... Parameters Cgs Cds Rds Ri Cgd Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC1301 REV.2_04/12/2004 Parameters 0.057 nH Rs 1.66 Ohm 2.08 Ohm Ls 0.019 nH Cds 0.959 pF 0.167 pF 5.78 Ohm Rds 93.2 Ohm Rd 0.074 pF 1.358 Ohm Ld 284.0 mS ...

Page 6

... TC1301 LARGE SIGNAL MODEL, V SCHEMATIC Lg Cgd Rg Rid www.DataSheet4U.com Cgs Id Ris Rs Ls CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290 C Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220 C to 250 C ...

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