RSA6.1J4T2R Rohm Semiconductor, RSA6.1J4T2R Datasheet - Page 2

TVS DIODE 80W 3V 2CH BI SC-75A

RSA6.1J4T2R

Manufacturer Part Number
RSA6.1J4T2R
Description
TVS DIODE 80W 3V 2CH BI SC-75A
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RSA6.1J4T2R

Voltage - Reverse Standoff (typ)
3V
Voltage - Breakdown
6.1V
Power (watts)
80W
Polarization
2 Channel Array - Bidirectional
Mounting Type
Surface Mount
Package / Case
SC-75-5, EMD5
Diode Configuration
Dual Common Anode
Diode Case Style
SC-75A
No. Of Pins
5
Svhc
No SVHC (18-Jun-2010)
Zener Voltage
6.65 V
Voltage Tolerance
8 %
Zener Current
1 uA
Maximum Reverse Leakage Current
1 uA
Mounting Style
SMD/SMT
Forward Voltage Drop
1 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
RSA6.1J4T2RTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RSA6.1J4T2R
Manufacturer:
AD
Quantity:
10
Part Number:
RSA6.1J4T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Electrical characteristic curves (Ta=25°C)
0.001
0.01
100
0.1
6.9
6.8
6.7
6.6
6.5
6.4
10
10
1
1
0.1
6
Ta=25℃
Ta=-25℃
Vz-Iz CHARACTERISTICS
6.5
Zz-Iz CHARACTERISTICS
ZENER VOLTAGE:Vz(V)
Vz DISRESION MAP
ZENER CURRENT(mA)
AVE:6.684V
7
1
Ta=150℃
Ta=125℃
Ta=75℃
7.5
Ta=25℃
n=30pcs
IZ=1mA
8
10
0.00001
0.0001
0.001
1000
1000
0.01
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
100
100
0.1
0.2
0.1
10
10
1
0
1
0.001
0
0.01
0.5
Rth-t CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0.1
IR DISRESION MAP
1
AVE:0.0190nA
Mounted on epoxy board
IM=10mA
TIME:t(s)
Ta=150℃
1.5
1ms
1
300us
time
10
2
IF=100mA
Ta=25℃
n=30pcs
VR=3V
Rth(j-a)
Rth(j-c)
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
100
2.5
1000
3
1000
100
45
44
43
42
41
40
39
38
37
36
35
10
1
0
0.5
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Ct DISRESION MAP
1
AVE:37.82pF
1.5
Rev.C
RSA6.1J4
2
Ta=25℃
f=1MHz
VR=0V
n=10pcs
f=1MHz
2.5
3
2/2

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