ESDALC6V1-5P6 STMicroelectronics, ESDALC6V1-5P6 Datasheet - Page 3

• Manufacturer Part Number: ESDALC6V1-5P6
• Description: IC ESD PROTECTION ARRAY SOT-666
• Manufacturer: STMicroelectronics
• Series: TRANSIL™r

Specifications of ESDALC6V1-5P6

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.1V
• Power (watts): 30W
• Polarization: 5 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Polarity: Unidirectional
• Channels: 5 Channels
• Clamping Voltage: 14 V
• Breakdown Voltage: 6.1 V
• Termination Style: SMD/SMT
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 30 W
• Capacitance: 12 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7229-2; ESDALC6V1-5P6

ESDALC6V1-5P6
Figure 2.
Figure 4.
Figure 6.
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10.0
8.0
7.0
6.0
1.0
0.1
25
0
V
P
5
I
BR
PP
PP
1 mA
(A)
[T initial] / P
j
6
25
Relative variation of peak pulse
power versus initial junction
temperature
Clamping voltage versus peak
pulse current (typical values)
Breakdown voltage versus initial
junction temperature
7
50
PP
8
50
[T initial=25°C)
j
9
T (°C)
T (°C)
V
j
j
CL
75
75
10
(V)
11
100
12
8/20 µs
T initial = 25°C
100
j
13
125
14
150
125
15
Figure 3.
Figure 5.
Figure 7.
1000
1000
100
100
14
12
10
10
10
8
6
4
2
0
1
0.0
25
C(pF)
1
P
I [T ] / I [T =25°C]
R
PP
(W)
j
V =3V
R
0.4
R
Peak pulse power versus
exponential pulse duration
(T
Relative variation of leakage
current versus junction
temperature (typical values)
Junction capacitance versus
reverse voltage applied
(typical values)
50
j
j
initial = 25 °C)
0.8
1.2
75
V (V)
R
t (µs)
p
T (°C)
10
j
1.6
100
2.0
Characteristics
T initial = 25°C
125
V
2.4
j
OSC
F=1MHz
T
=30mV
j
=25°C
RMS
2.8
100
150
3/8