MAX3208EAUB+ Maxim Integrated Products, MAX3208EAUB+ Datasheet - Page 3

IC ESD PROT DIFF 10-UMAX

MAX3208EAUB+

Manufacturer Part Number
MAX3208EAUB+
Description
IC ESD PROT DIFF 10-UMAX
Manufacturer
Maxim Integrated Products
Type
Diode Arraysr
Series
MAX3208Er
Datasheet

Specifications of MAX3208EAUB+

Power (watts)
444mW
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Package / Case
10-MSOP, Micro10™, 10-uMAX, 10-uSOP
Capacitance Value
10(Typ) pF
Maximum Clamping Voltage
105.5 V
Number Of Elements Per Chip
4
Esd Protection Voltage
±15@HBM|±15@Air Gap|±8@Contact Disc KV
Maximum Leakage Current
0.1 uA
Channels
4 Channels
Clamping Voltage
100 V
Operating Voltage
- 0.3 V to + 6.0 V
Termination Style
SMD/SMT
Capacitance
2 pF
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Dimensions
3.05 (Max) mm W x 3.05 (Max) mm L
Diode Type
ESD Protection
Power Dissipation Pd
444mW
Diode Case Style
µMAX
No. Of Pins
10
Termination Type
SMD
Capacitance, Cd
2.6pF
Operating Temperature Range
-40°C To +125°C
Rohs Compliant
Yes
Filter Terminals
SMD
Esd Threat Voltage Max
15kV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Breakdown
-
Voltage - Reverse Standoff (typ)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
(V
12, 13, 15
TQFN-EP
1, 3, 6, 8,
9, 11, 14,
CC
4, 5, 7,
1.5
1.3
1.1
0.9
0.7
0.5
0.3
16
10
= +5V, T
2
10
MAX3205E
30
A
A2, A3, B1,
B3, C1, C2
= +25°C, unless otherwise noted.)
50
CLAMP VOLTAGE
vs. DC CURRENT
WLP
DC CURRENT (mA)
C3
B2
A1
I/O_ TO V
_______________________________________________________________________________________
70
GND TO I/O_
90
CC
MAX3207E
110
SOT23
PIN
1, 4
3, 6
2
5
130
150
2, 5, 7, 10
Dual, Quad, and Hex High-Speed
1, 4, 6, 9
μMAX
10,000
3
8
Differential ESD-Protection ICs
1000
100
MAX3208E
10
1
-40
4, 7, 12, 15
13, 14, 16
TQFN-EP
1, 3, 5, 6,
8, 9, 11,
0
10
2
LEAKAGE CURRENT
vs. TEMPERATURE
TEMPERATURE (°C)
40
NAME
GND
Typical Operating Characteristics
N.C.
N.C.
I/O_
V
EP
CC
80
ESD-Protected Channel
No Connection. Not internally connected.
No Connection. The solder sphere is omitted from
this location (see the Package Information section).
Ground. Connect GND with a low-impedance
connection to the ground plane.
Power-Supply Input. Bypass V
0.1μF ceramic capacitor as close to the device as
possible.
Exposed Pad (TQFN Only). Connect EP to GND.
120
4
3
2
1
0
0
FUNCTION
1
Pin Description
INPUT CAPACITANCE
vs. INPUT VOLTAGE
INPUT VOLTAGE (V)
CC
2
to GND with a
3
4
5
3

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