ATMEGA16A-AU Atmel, ATMEGA16A-AU Datasheet - Page 18
![MCU AVR 16K FLASH 16MHZ 44-TQFP](/photos/6/70/67042/313-44-tqfp_sml.jpg)
ATMEGA16A-AU
Manufacturer Part Number
ATMEGA16A-AU
Description
MCU AVR 16K FLASH 16MHZ 44-TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA16A-AU
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Processor Series
ATMEGA16x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
2-Wire/SPI/USART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
32
Number Of Timers
3
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK500 - PROGRAMMER AVR STARTER KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATMEGA16A-AU
Manufacturer:
HIROSE
Quantity:
3 000
Part Number:
ATMEGA16A-AU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
ATMEGA16A-AUR
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
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7.4
7.4.1
7.4.2
18
EEPROM Data Memory
ATmega16A
EEPROM Read/Write Access
EEPROM Write During Power-down Sleep Mode
Figure 7-3.
The ATmega16A contains 512 bytes of data EEPROM memory. It is organized as a separate
data space, in which single bytes can be read and written. The EEPROM has an endurance of at
least 100,000 write/erase cycles. The access between the EEPROM and the CPU is described
in the following, specifying the EEPROM Address Registers, the EEPROM Data Register, and
the EEPROM Control Register.
For a detailed description of SPI, JTAG, and Parallel data downloading to the EEPROM, see
page
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See
situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
When entering Power-down Sleep mode while an EEPROM write operation is active, the
EEPROM write operation will continue, and will complete before the Write Access time has
passed. However, when the write operation is completed, the Oscillator continues running, and
“Preventing EEPROM Corruption” on page 19
276,
page
CC
Address
clk
is likely to rise or fall slowly on Power-up/down. This causes the device for some
On-chip Data SRAM Access Cycles
Data
Data
280, and
WR
CPU
RD
page
Compute Address
267, respectively.
T1
Memory Access Instruction
Address Valid
for details on how to avoid problems in these
T2
Table
7-1. A self-timing function, however,
Next Instruction
T3
8154B–AVR–07/09
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