DSPIC30F3010-30I/SO Microchip Technology, DSPIC30F3010-30I/SO Datasheet - Page 67
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DSPIC30F3010-30I/SO
Manufacturer Part Number
DSPIC30F3010-30I/SO
Description
IC DSPIC MCU/DSP 24K 28SOIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F3010-30ISO.pdf
(228 pages)
2.DSPIC30F3010-30ISO.pdf
(18 pages)
3.DSPIC30F3010-30ISO.pdf
(6 pages)
4.DSPIC30F3010-30ISO.pdf
(16 pages)
5.DSPIC30F3010-30ISO.pdf
(22 pages)
6.DSPIC30F3014-30IP.pdf
(244 pages)
Specifications of DSPIC30F3010-30I/SO
Program Memory Type
FLASH
Program Memory Size
24KB (8K x 24)
Package / Case
28-SOIC (7.5mm Width)
Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
20
Eeprom Size
1K x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Product
DSCs
Data Bus Width
16 bit
Processor Series
DSPIC30F
Core
dsPIC
Maximum Clock Frequency
30 MHz
Data Ram Size
1 KB
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52713-733, 52714-737, 53276-922, EWDSPIC
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE4000, DM240002, DM300027, DM330011, DM300018, DM183021
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MIL
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DSPIC30F301030ISO
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F3010-30I/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
7.3
To write an EEPROM data location, the following
sequence must be followed:
1.
2.
3.
EXAMPLE 7-4:
2004 Microchip Technology Inc.
; Point to data memory
; The NVMADR captures last table access address
; Select data EEPROM for 1 word op
; Operate key to allow write operation
; Write cycle will complete in 2mS. CPU is not stalled for the Data Write Cycle
; User can poll WR bit, use NVMIF or Timer IRQ to determine write complete
Erase data EEPROM word.
a)
b)
c)
d)
e)
f)
g)
h)
Write data word into data EEPROM write
latches.
Program 1 data word into data EEPROM.
a)
b)
c)
d)
e)
f)
g)
MOV
MOV
MOV
MOV
TBLWTL
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
Writing to the Data EEPROM
Select word, data EEPROM, erase and set
WREN bit in NVMCON register.
Write address of word to be erased into
NVMADRU/NVMADR.
Enable NVM interrupt (optional).
Write ‘55’ to NVMKEY.
Write ‘AA’ to NVMKEY.
Set the WR bit. This will begin erase cycle.
Either poll NVMIF bit or wait for NVMIF
interrupt.
The WR bit is cleared when the erase cycle
ends.
Select word, data EEPROM, program, and
set WREN bit in NVMCON register.
Enable NVM write done interrupt (optional).
Write ‘55’ to NVMKEY.
Write ‘AA’ to NVMKEY.
Set The WR bit. This will begin program
cycle.
Either poll NVMIF bit or wait for NVM
interrupt.
The WR bit is cleared when the write cycle
ends.
#5
DATA EEPROM WORD WRITE
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
W1
#LOW(WORD),W2
W2
#0x4004,W0
W0
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
TBLPAG
[ W0]
NVMCON
NVMKEY
NVMKEY
Preliminary
; Block all interrupts with priority <7
; for next 5 instructions
The write will not initiate if the above sequence is not
exactly followed (write 0x55 to NVMKEY, write 0xAA to
NVMCON, then set WR bit) for each word. It is strongly
recommended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in NVMCON must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM, due to unexpected code exe-
cution. The WREN bit should be kept clear at all times,
except when updating the EEPROM. The WREN bit is
not cleared by hardware.
After a write sequence has been initiated, clearing the
WREN bit will not affect the current write cycle. The WR
bit will be inhibited from being set unless the WREN bit
is set. The WREN bit must be set on a previous instruc-
tion. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR bit is
cleared in hardware and the Non-Volatile Memory
Write Complete Interrupt Flag bit (NVMIF) is set. The
user may either enable this interrupt, or poll this bit.
NVMIF must be cleared by software.
7.3.1
Once the user has erased the word to be programmed,
then a table write instruction is used to write one write
latch, as shown in Example 7-4.
; Init pointer
; Get data
; Write data
; Write the 0x55 key
; Write the 0xAA key
; Initiate program sequence
WRITING A WORD OF DATA
EEPROM
dsPIC30F
DS70082G-page 65