AT89C5115-RATUM Atmel, AT89C5115-RATUM Datasheet - Page 97

IC 8051 MCU FLASH 16K 32VQFP

AT89C5115-RATUM

Manufacturer Part Number
AT89C5115-RATUM
Description
IC 8051 MCU FLASH 16K 32VQFP
Manufacturer
Atmel
Series
89Cr
Datasheet

Specifications of AT89C5115-RATUM

Core Processor
8051
Core Size
8-Bit
Speed
40MHz
Connectivity
UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
20
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TQFP, 32-VQFP
Processor Series
AT89x
Core
8051
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
UART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
20
Number Of Timers
2
Operating Supply Voltage
3 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
CANADAPT28
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Package
32VQFP
Device Core
8051
Family Name
89C
Maximum Speed
40 MHz
For Use With
AT89OCD-01 - USB EMULATOR FOR AT8XC51 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT89C5115-RATUM
Manufacturer:
Atmel
Quantity:
10 000
Electrical Characteristics
Absolute Maximum Ratings*
DC Parameters for
Standard Voltage
T
Table 72. DC Parameters in Standard Voltage
Notes:
4128G–8051–02/08
I = industrial ....................................................... -40°C to 85°C
Storage Temperature ................................... -65°C to + 150°C
Voltage on V
Voltage on Any Pin from V
Power Dissipation ............................................................. 1 W
A
Symbol
= -40°C to +85°C; V
V
R
V
V
C
V
V
IH1
I
I
I
I
I
RST
PD
CC
TL
OH
IL
LI
OL
IH
IO
IL
(2)
1. Typicals are based on a limited number of samples and are not guaranteed. The values listed are at room temperature.
2. Flash retention is guaranteed with the same formula for V
Parameter
Input Low Voltage
Input High Voltage except XTAL1, RST
Input High Voltage, XTAL1, RST
Output Low Voltage, ports 1, 2, 3 and 4
Output High Voltage, ports 1, 2, 3, 4 and 5
RST Pulldown Resistor
Logical 0 Input Current ports 1, 2, 3 and 4
Input Leakage Current
Logical 1 to 0 Transition Current, ports 1, 2, 3
and 4
Capacitance of I/O Buffer
Power-down Current
Power Supply Current
CC
from V
SS
SS
.....................................-0.5V to + 6V
SS
= 0 V; V
.....................-0.5V to V
CC
= 3 volts to 5.5 volts; F = 0 to 40 MHz
(3)
CC
+ 0.2V
0.2 V
ICC_FLASH_WRITE
V
V
V
0.7 V
CC
CC
CC
Min
-0.5
CC
50
- 0.3
- 0.7
- 1.5
I
CC
*NOTICE:
+ 0.9
I
CCIDLE
CCOP
CC
= 0.7 Freq (MHz) + 3 mA
= 0.6 Freq (MHz) + 2 mA
min down to 0V.
Typ
160
(7)
mA
90
S
lute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other conditions above those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Power Dissipation value is based on the maxi-
mum allowable die temperature and the thermal
resistance of the package.
(1)
=0.4 Freq (MHz) + 20
tresses at or above those listed under “Abso-
0.2Vcc - 0.1
V
V
CC
CC
Max
-650
0.45
200
400
±10
0.3
1.0
-50
10
+ 0.5
+ 0.5
Unit
kΩ
µA
µA
µA
pF
µA
V
V
V
V
V
V
V
V
V
I
I
I
I
I
I
V
Vin = 0.45V
0.45V < Vin < V
Vin = 2.0V
Fc = 1 MHz
T
3V < V
3V < V
OL
OL
OL
OH
OH
OH
A
CC
= 25°C
= 100 µA
= 1.6 mA
= 3.5 mA
= -10 µA
= -30 µA
= -60 µA
= 5V ± 10%
Test Conditions
CC
CC
< 5.5V
< 5.5V
CC
(4)
(1)(2)
97

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