STM32F101VBT6 STMicroelectronics, STM32F101VBT6 Datasheet - Page 80
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STM32F101VBT6
Manufacturer Part Number
STM32F101VBT6
Description
MCU ARM 128KB FLSH/TIMER 100LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Specifications of STM32F101VBT6
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
80
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Processor Series
STM32F101x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
16 KB
Interface Type
I2C/SPI/USART
Maximum Clock Frequency
36 MHz
Number Of Programmable I/os
80
Number Of Timers
3
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Minimum Operating Temperature
- 40 C
On-chip Adc
16-ch x 12-bit
For Use With
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Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-6061
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Company
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Manufacturer
Quantity
Price
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Revision history
8
80/87
Revision history
Table 54.
06-Jun-2007
20-Jul-07
Date
Document revision history
Revision
1
2
I
and Sleep modes (TA = 85
V
V
characteristics.
Note 6
Medium-density STM32F101xx pin
Figure 20: Low-speed external clock source AC timing
Figure 11: Power supply
protection
circuit(1)
Sample size modified and machine model removed in
discharge
Number of parts modified and standard reference updated in
latch-up. 25 °C and 85 °C conditions removed and class name modified
in
t
characteristics.
In
endurance added, data retention for T
retention for T
operating
V
voltage. I
consumption in Run and Sleep modes (TA = 85
I
R
characteristics. R
characteristics
Datasheet title corrected. USB characteristics section removed.
Features on page 1
First draft.
DD
SU(LSE)
DD(HSI)
BAT
REF+
BG
PU
Table 32: Electrical
Table 28: Flash memory endurance and data
values modified in
changed to V
and R
Doc ID 13586 Rev 14
range modified in
min value, t
modified and
max value added to
changed to t
DD
modified.
conditions.
(ESD).
and
PD
max values added to
A
min and max values added to
Figure 29: I2C bus AC waveforms and measurement
(two notes removed).
Table 38: TIMx characteristics
= 85 °C added. Note removed below
PU
REFINT
STAB
list optimized. Small text changes.
min and max values added to
SU(LSE)
Note
sensitivities.
Table 11: Maximum current consumption in Run
, t
Power supply
lat
scheme,
in
8,
and f
°C).
Table 11: Embedded internal reference
in
Table 23: HSI oscillator
Note 5
Table 21: HSE 4-16 MHz oscillator
Changes
TRIG
Table 11: Maximum current
Figure 28: Recommended NRST pin
definitions.
and
added to
schemes.
A
STM32F101x8, STM32F101xB
= 25 °C removed and data
Note 7
Table 34: I/O static
modified.
Table 42: ADC
added below
retention, typical
°C).
Table 37: NRST pin
characteristics.
Table 8: General
Electrostatic
diagram,
Table 4:
Static