MC9S08QE32CFT Freescale Semiconductor, MC9S08QE32CFT Datasheet - Page 12

• Manufacturer Part Number: MC9S08QE32CFT
• Description: MCU 8BIT 32K FLASH 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QE32CFT

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 50MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN
• Cpu Family: HCS08
• Device Core Size: 8b
• Interface Type: SCI/SPI
• # I/os (max): 40
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 2V
• On-chip Adc: 10-chx12-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Package Type: QFN EP
• Processor Series: S08QE
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Number Of Programmable I/os: 40
• Operating Supply Voltage: - 0.3 V to + 3.8 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMOQE128, EVBQE128
• Minimum Operating Temperature: - 40 C
• For Use With: DEMO9S08QE32 - DEMO FOR S08 AND QE32/16DC9S08QE32 - DAUGHTER CARD FOR DEMO9S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
3.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
3.6
This section includes information about power supply requirements and I/O pin characteristics.
12
ESD Protection and Latch-Up Immunity
DC Characteristics
1
Latch-up
Machine
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Model
Human
Body
No.
1
2
3
4
Series resistance
Storage capacitance
Number of pulses per pin
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Human body model (HBM)
Machine model (MM)
Charge device model (CDM)
Latch-up current at T
Table 6. ESD and Latch-Up Protection Characteristics
Table 5. ESD and Latch-up Test Conditions
Description
MC9S08QE32 Series MCU Data Sheet, Rev. 6
Rating
1
A
= 85°C
Symbol
Symbol
V
V
V
I
R1
R1
HBM
CDM
LAT
—
—
C
C
MM
±2000
±200
±500
±100
Min
Value
1500
–2.5
100
200
7.5
3
0
3
Max
—
—
—
—
Freescale Semiconductor
Unit
Unit
mA
pF
pF
Ω
Ω
V
V
V
V
V