ATTINY2313V-10SUR Atmel, ATTINY2313V-10SUR Datasheet - Page 167

• Manufacturer Part Number: ATTINY2313V-10SUR
• Description: MCU AVR 2KB FLASH 10MHZ 20SOIC
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY2313V-10SUR

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Cpu Family: ATtiny
• Device Core: AVR
• Device Core Size: 8b
• Frequency (max): 10MHz
• Interface Type: SPI/USART/USI
• Total Internal Ram Size: 128Byte
• # I/os (max): 18
• Number Of Timers - General Purpose: 2
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 1.8V
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 20
• Package Type: SOIC W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Compliant

Programming the
EEPROM
Reading the Flash
2543L–AVR–08/10
The EEPROM is organized in pages, see
EEPROM, the program data is latched into a page buffer. This allows one page of data to be
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to
Data loading):
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. C: Load Data (0x00 - 0xFF).
J: Repeat 3 through 4 until the entire buffer is filled.
K: Program EEPROM page
1. Set BS to “0”.
2. Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY
3. Wait until to RDY/BSY goes high before programming the next page (See
Figure 72. Programming the EEPROM Waveforms
The algorithm for reading the Flash memory is as follows (refer to
page 165
1. A: Load Command “0000 0010”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. Set OE to “0”, and BS1 to “0”. The Flash word low byte can now be read at DATA.
5. Set BS to “1”. The Flash word high byte can now be read at DATA.
6. Set OE to “1”.
goes low.
signal waveforms).
RESET +12V
RDY/BSY
PAGEL
XTAL1
DATA
XA1
XA0
BS1
BS2
WR
OE
for details on Command and Address loading):
“Programming the Flash” on page 165
0x11
A
ADDR. HIGH
G
ADDR. LOW
B
DATA
C
XX
Table 70 on page
E
ADDR. LOW
B
for details on Command, Address and
DATA
C
K
XX
160. When programming the
E
“Programming the Flash” on
L
Figure 72
for
167