AT91SAM7XC128B-AU-999 Atmel, AT91SAM7XC128B-AU-999 Datasheet - Page 18

• Manufacturer Part Number: AT91SAM7XC128B-AU-999
• Description: IC MCU ARM7 128KB FLASH 100LQFP
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM7XC128B-AU-999

• Core Processor: ARM7
• Core Size: 16/32-Bit
• Speed: 55MHz
• Connectivity: CAN, Ethernet, I²C, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number Of I /o: 62
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

8. Memory
8.1
8.2
8.3
18
AT91SAM7XC512
AT91SAM7XC256
AT91SAM7XC128
AT91SAM7XC512/256/128 Preliminary
• 512 Kbytes of dual-plane Flash Memory
• 128 Kbytes of Fast SRAM
• 256 Kbytes of Flash Memory
• 64 Kbytes of Fast SRAM
• 128 Kbytes of Flash Memory
• 32 Kbytes of Fast SRAM
– 2 contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, protecting 32 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 16 lock bits, each protecting 16 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– 512 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 8 lock bits, each protecting 8 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
6209DS–ATARM–17-Feb-09