DSPIC33FJ256GP710A-E/PF Microchip Technology, DSPIC33FJ256GP710A-E/PF Datasheet - Page 85
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DSPIC33FJ256GP710A-E/PF
Manufacturer Part Number
DSPIC33FJ256GP710A-E/PF
Description
IC DSPIC DSC 256K FLASH 100TQFP
Manufacturer
Microchip Technology
Series
dsPIC™ 33Fr
Datasheets
1.DSPIC33FJ64GP206-IPT.pdf
(322 pages)
2.DSPIC33FJ64GP206A-IMR.pdf
(338 pages)
3.DSPIC33FJ128GP306A-IPT.pdf
(350 pages)
Specifications of DSPIC33FJ256GP710A-E/PF
Program Memory Type
FLASH
Program Memory Size
256KB (256K x 8)
Package / Case
100-TQFP
Core Processor
dsPIC
Core Size
16-Bit
Speed
40 MIPs
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART
Peripherals
AC'97, Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Number Of I /o
85
Ram Size
30K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 32x10b/12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Product
DSCs
Data Bus Width
16 bit
Processor Series
DSPIC33F
Core
dsPIC
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
85
Data Ram Size
30 KB
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52713-733, 52714-737, 53276-922, EWDSPIC
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, DM240001, DM240002, DM330011, DM300019, DV164033, MA330011, MA330012, DM300024
Minimum Operating Temperature
- 40 C
Package
100TQFP
Device Core
dsPIC
Family Name
dSPIC33
Maximum Speed
40 MHz
Operating Supply Voltage
3.3 V
Interface Type
CAN/I2C/SPI/UART
On-chip Adc
64-chx10-bit|64-chx12-bit
Number Of Timers
9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSPIC33FJ256GP710A-E/PF
Manufacturer:
Microchip Technology
Quantity:
135
Company:
Part Number:
DSPIC33FJ256GP710A-E/PF
Manufacturer:
Microchip Technology
Quantity:
10 000
- DSPIC33FJ64GP206-IPT PDF datasheet
- DSPIC33FJ64GP206A-IMR PDF datasheet #2
- DSPIC33FJ128GP306A-IPT PDF datasheet #3
- Current page: 85 of 350
- Download datasheet (6Mb)
5.4.1
The user can program one row of program Flash
memory at a time. To do this, it is necessary to erase
the 8-row erase page that contains the desired row.
The general process is:
1.
2.
3.
EXAMPLE 5-1:
© 2011 Microchip Technology Inc.
; Set up NVMCON for block erase operation
; Init pointer to row to be ERASED
Read
(512 instructions) and store in data RAM.
Update the program data in RAM with the
desired new data.
Erase the block (see
a)
b)
c)
d)
e)
Set the NVMOP bits (NVMCON<3:0>) to
‘0010’ to configure for block erase. Set the
ERASE bit (NVMCON<6>) and the WREN
bit (NVMCON<14>).
Write the starting address of the page to be
erased into the TBLPAG and W registers.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the
duration of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
MOV
MOV
MOV
MOV
MOV
TBLWTL W0, [W0]
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
eight
#0x4042, W0
W0, NVMCON
#tblpage(PROG_ADDR), W0
W0, TBLPAG
#tbloffset(PROG_ADDR), W0
#5
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
rows
ERASING A PROGRAM MEMORY PAGE
Example
dsPIC33FJXXXGPX06A/X08A/X10A
of
program
5-1):
memory
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; Initialize in-page EA[15:0] pointer
; Set base address of erase block
; Block all interrupts with priority <7
; for next 5 instructions
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
4.
5.
6.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
must wait for the programming time until programming
is complete. The two instructions following the start of
the programming sequence should be NOPs, as shown
in
Example
Write the first 64 instructions from data RAM into
the program memory buffers (see
Write the program block to Flash memory:
a)
b)
c)
d)
Repeat steps 4 and 5, using the next available
64 instructions from the block in data RAM by
incrementing the value in TBLPAG, until all
512 instructions are written back to Flash memory.
Set the NVMOP bits to ‘0001’ to configure
for row programming. Clear the ERASE bit
and set the WREN bit.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash
memory is done, the WR bit is cleared
automatically.
5-3.
DS70593C-page 85
Example
5-2).
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