ST7FLITE35F2B6 STMicroelectronics, ST7FLITE35F2B6 Datasheet - Page 145
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ST7FLITE35F2B6
Manufacturer Part Number
ST7FLITE35F2B6
Description
IC MCU 8BIT 8K FLASH 20DIP
Manufacturer
STMicroelectronics
Series
ST7r
Specifications of ST7FLITE35F2B6
Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Connectivity
LINSCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
15
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
384 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-DIP (0.300", 7.62mm)
Processor Series
ST7FLITE3x
Core
ST7
Data Bus Width
8 bit
Data Ram Size
384 B
Interface Type
LINSCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
15
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Development Tools By Supplier
ST7FLITE-SK/RAIS, ST7MDT10-DVP3, ST7MDT10-EMU3, STX-RLINK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 7 Channel
For Use With
497-5858 - EVAL BOARD PLAYBACK ST7FLITE497-5085 - EVAL BOARD UNIV MOTOR CONTROL497-5049 - KIT STARTER RAISONANCE ST7FLITE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
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13.6 MEMORY CHARACTERISTICS
T
13.6.1 RAM and Hardware Registers
13.6.2 FLASH Program Memory
13.6.3 EEPROM Data Memory
Notes:
1. Minimum V
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the T
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
A
Symbol
Symbol
Symbol
= -40°C to 125°C, unless otherwise specified
V
N
N
t
t
t
V
V
I
prog
RET
prog
t
DD
ret
RM
RW
RW
DD
DD
Data retention mode
Operating voltage for Flash write/erase
Programming time for 1~32 bytes
Programming time for 1.5 kBytes
Data retention
Write erase cycles
Supply current
Operating voltage for EEPROM write/erase
Programming time for 1~32 bytes
Data retention
Write erase cycles
DD
supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
Parameter
Parameter
4)
4)
Parameter
1)
2)
A
decreases.
HALT mode (or RESET)
Refer to operating range
of V
13.3.1 on page 133
T
T
T
T
Power down mode / HALT
f
No Read/No Write Mode
CPU
A
A
A
A
Refer to operating range
of V
13.3.1 on page 133
T
T
T
Conditions
=−40 to +125°C
=+25°C
=+55°C
=+25°C
A
A
A
Read / Write / Erase
DD
=−40 to +125°C
=+55°C
=+25°C
= 8MHz, V
DD
Conditions
with T
Conditions
with T
modes
3)
3)
A,
A,
section
DD
section
= 5.5V
Min
1.6
Min
10K
2.7
20
300K
Min
2.7
20
Typ
0.24
Typ
5
0
Typ
5
ST7LITE3xF2
Max
Max
0.48
2.6
100
5.5
0.1
10
Max
5.5
10
6)
145/173
cycles
years
Unit
cycles
Unit
years
mA
ms
µA
µA
Unit
V
V
ms
s
V
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