STM32F103R6T6 STMicroelectronics, STM32F103R6T6 Datasheet - Page 52
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STM32F103R6T6
Manufacturer Part Number
STM32F103R6T6
Description
MCU ARM 32KB FLASH MEM 64-LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F103C4T6A.pdf
(87 pages)
Specifications of STM32F103R6T6
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
For Use With
497-10048 - BOARD EVAL ACCELEROMETER497-8853 - BOARD DEMO STM32 UNIV USB-UUSCIKSDKSTM32-PL - KIT IAR KICKSTART STM32 CORTEXM3497-8512 - KIT STARTER FOR STM32F10XE MCU497-8505 - KIT STARTER FOR STM32F10XE MCU497-8304 - KIT STM32 MOTOR DRIVER BLDC497-6289 - KIT PERFORMANCE STICK FOR STM32MCBSTM32UME - BOARD EVAL MCBSTM32 + ULINK-MEMCBSTM32U - BOARD EVAL MCBSTM32 + ULINK2MCBSTM32 - BOARD EVAL FOR STM STM32X SER497-6053 - KIT STARTER FOR STM32497-6052 - KIT STARTER FOR STM32497-6050 - KIT STARTER FOR STM32497-6049 - KIT EVALUATION LOW COST STM32497-6048 - BOARD EVALUATION FOR STM32497-6047 - KIT DEVELOPMENT FOR STM32497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
497-6064
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F103R6T6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Company:
Part Number:
STM32F103R6T6A
Manufacturer:
ST
Quantity:
611
Company:
Part Number:
STM32F103R6T6A
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
5.3.10
52/87
Table 28.
1. Guaranteed by design, not tested in production.
Table 29.
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Symbol
Symbol
N
V
t
I
RET
DD
prog
END
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Supply current
Programming voltage
Endurance
Data retention
Parameter
Flash memory characteristics (continued)
Flash memory endurance and data retention
Parameter
T
T
1 kcycle
1 kcycle
10 kcycles
A
A
= –40 to +105 °C (7 suffix versions)
Table
= –40 to +85 °C (6 suffix versions)
Doc ID 15060 Rev 5
(2)
(2)
Read mode
f
states, V
Write / Erase modes
f
Power-down mode / Halt,
V
30. They are based on the EMS levels and classes
HCLK
HCLK
DD
(2)
at T
at T
at T
Conditions
= 3.0 to 3.6 V
A
A
= 72 MHz with 2 wait
= 72 MHz, V
= 85 °C
= 105 °C
A
DD
Conditions
= 55 °C
= 3.3 V
DD
= 3.3 V
STM32F103x4, STM32F103x6
Min
Min
30
10
20
10
2
(1)
(1)
Value
Typ
Typ
Max
Max
3.6
20
50
5
(1)
DD
kcycles
and
Years
Unit
Unit
mA
mA
µA
V