STR736FV0T7 STMicroelectronics, STR736FV0T7 Datasheet - Page 35

MCU 32BIT 64K FLASH 100-TQFP

STR736FV0T7

Manufacturer Part Number
STR736FV0T7
Description
MCU 32BIT 64K FLASH 100-TQFP
Manufacturer
STMicroelectronics
Series
STR7r
Datasheet

Specifications of STR736FV0T7

Core Processor
ARM7
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
100-TQFP, 100-VQFP
Processor Series
STR736x
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
16 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
36 MHz
Number Of Programmable I/os
72
Number Of Timers
9
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MCBSTR730, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STR730-SK/HIT, STR730-SK/IAR, STR730-SK/RAIS, STR731-SK/IAR, STR730-EVAL, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STR736FV0T7
Manufacturer:
STMicroelectronics
Quantity:
10 000
STR73xFxx
4.3.4
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 19.
Symbol
V
V
FESD
EFTB
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 1000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
EMS data
Parameter
DD
and V
SS
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
DD
DD
=5 V, T
=5 V, T
A
A
=+25° C, f
=+25° C, f
Conditions
Electrical parameters
MCLK
MCLK
=36 MHz
=36 MHz
DD
and V
Level/
Class
4A
4A
35/52
SS

Related parts for STR736FV0T7