C8051T634-GM Silicon Laboratories Inc, C8051T634-GM Datasheet - Page 29
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C8051T634-GM
Manufacturer Part Number
C8051T634-GM
Description
IC MCU 2KB 20PIN QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051T63xr
Specifications of C8051T634-GM
Program Memory Type
OTP
Program Memory Size
2KB (2K x 8)
Package / Case
20-QFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
17
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 1x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051T6x
Core
8051
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
I2C/SPI/UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051T630DK
Minimum Operating Temperature
- 40 C
On-chip Adc
16-ch x 10-bit
On-chip Dac
16-ch x 10-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1464 - KIT DEV FOR C8051T630 FAMILY
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1462-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C8051T634-GMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
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Table 5.10. Temperature Sensor Electrical Characteristics
V
Table 5.11. Voltage Reference Electrical Characteristics
V
Parameter
Linearity
Slope
Slope Error*
Offset
Offset Error*
Note: Represents one standard deviation from the mean.
Parameter
On-Chip Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature
Coefficient
Load Regulation
VREF Turn-On Time
(1.2 V setting)
VREF Turn-On Time
(2.4 V setting)
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
DD
DD
= 3.0 V,
= 3.0 V; –40 to +85 °C unless otherwise specified.
–
40 to +85 °C unless otherwise specified.
1.2 V Setting, 25 °C ambient
2.4 V Setting 25 °C ambient
Load = 0 to 200 µA to GND, 1.2 V setting
Load = 0 to 200 µA to GND, 2.4 V setting
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
1.2 V setting
2.4 V setting
Sample Rate = 500 ksps; VREF = 2.5 V
REFBE = 1, 2.4 V setting
Temp = 0 °C
Temp = 0 °C
Conditions
Conditions
Rev. 1.0
C8051T630/1/2/3/4/5
Min
—
—
—
—
—
1.195
Min
2.3
—
—
—
—
—
—
—
—
—
—
—
—
0
±0.5
3.49
Typ
±40
930
±12
2.35
Typ
±15
120
360
4.5
3.7
1.2
4.3
1.2
5.0
25
90
12
75
—
Max
1.205
—
—
—
—
—
Max
V
100
2.4
—
—
—
—
—
—
—
—
—
—
6
DD
mV/°C
µV/°C
Units
ppm/°C
µV/µA
µV/µA
mV
mV
Units
µV/V
µV/V
°C
mA
ms
ms
µA
µA
µs
µs
V
V
V
29
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