MC9S08AC48CFDE Freescale Semiconductor, MC9S08AC48CFDE Datasheet - Page 54
![IC MCU 8BIT 48K FLASH 48-QFN](/photos/12/34/123432/mc9s08ac32cpue_sml.jpg)
MC9S08AC48CFDE
Manufacturer Part Number
MC9S08AC48CFDE
Description
IC MCU 8BIT 48K FLASH 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08AC60CFJE.pdf
(348 pages)
Specifications of MC9S08AC48CFDE
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
38
Program Memory Size
48KB (48K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN
Processor Series
S08AC
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SCI, SPI
Operating Supply Voltage
- 0.3 V to + 5.8 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08AC60E, DEMOACEX, DEMOACKIT, DCF51AC256, DC9S08AC128, DC9S08AC16, DC9S08AC60, DEMO51AC256KIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08AC48CFDE
Manufacturer:
INTEL
Quantity:
210
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Chapter 4 Memory
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
54
2. The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
YES
Figure 4-3. FLASH Burst Program Flowchart
TO BUFFER ADDRESS AND DATA
0
WRITE COMMAND TO FCMD
NEW BURST COMMAND ?
MC9S08AC60 Series Data Sheet, Rev. 2
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE 1 TO FCBEF
WRITE TO FCDIV
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
FCBEF ?
FCCF ?
START
DONE
1
NO
NO
1
1
(1)
(2)
0
YES
0
(2)
checking FCBEF or FCCF.
(1)
Wait at least four bus cycles before
after reset.
Only required once
ERROR EXIT
Freescale Semiconductor
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