MC9S08JM32CGT Freescale Semiconductor, MC9S08JM32CGT Datasheet - Page 54
![IC MCU 8BIT 32K FLASH 48-QFN](/photos/12/35/123566/mc9s08jm32cgt_sml.jpg)
MC9S08JM32CGT
Manufacturer Part Number
MC9S08JM32CGT
Description
IC MCU 8BIT 32K FLASH 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08JM32CLD.pdf
(388 pages)
Specifications of MC9S08JM32CGT
Core Processor
HCS08
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, LIN, SCI, SPI, USB
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
37
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN
Processor Series
S08JM
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
SCI/SPI
Maximum Clock Frequency
24 MHz
Number Of Programmable I/os
37
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMOJM, DEMOJMSKT, DEMOFLEXISJMSD, DEMO9S08JM16
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 12-bit
Controller Family/series
HCS08
No. Of I/o's
37
Ram Memory Size
2KB
Cpu Speed
48MHz
No. Of Timers
2
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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Chapter 4 Memory
4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and then remains enabled after completion of the
burst program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
54
•
•
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
MC9S08JM60 Series Data Sheet, Rev. 3
Freescale Semiconductor
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