D12332VFC25 Renesas Electronics America, D12332VFC25 Datasheet - Page 203
D12332VFC25
Manufacturer Part Number
D12332VFC25
Description
MCU 3V 0K 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.DF2338VFC25V.pdf
(1246 pages)
Specifications of D12332VFC25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
106
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412332VFC25
HD6412332VFC25
HD6412332VFC25
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D12332VFC25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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6.5.7
When DRAM is accessed, RAS precharging time must be secured. With the chip, one T
always inserted when DRAM space is accessed. This can be changed to two T
the TPC bit in MCR to 1. Set the appropriate number of T
connected and the operating frequency of the chip. Figure 6.16 shows the timing when two T
states are inserted.
When the TCP bit is set to 1, two T
Read
Write
Note: n = 2 to 5
Precharge State Control
A
CS
CAS, LCAS
HWR (WE)
D
HWR (WE)
D
φ
23
15
15
n
to A
to D
to D
(RAS)
0
0
0
Figure 6.16 Timing with Two-State Precharge Cycle
T
p1
p
states are also used for refresh cycles.
T
p2
Rev.4.00 Sep. 07, 2007 Page 171 of 1210
p
Row
T
cycles according to the DRAM
r
T
c1
Column
p
states by setting
REJ09B0245-0400
T
c2
p
state is
p
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