ATMEGA162-16MC Atmel, ATMEGA162-16MC Datasheet - Page 245

IC MCU AVR 16K 5V 16MHZ 44-QFN

ATMEGA162-16MC

Manufacturer Part Number
ATMEGA162-16MC
Description
IC MCU AVR 16K 5V 16MHZ 44-QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheets

Specifications of ATMEGA162-16MC

Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
EBI/EMI, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
35
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Package / Case
44-VQFN Exposed Pad
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Data Converters
-
Table 111. SPI Serial Programming Instruction Set
2513C–AVR–09/02
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory
Page
Write Program Memory
Page
Read EEPROM Memory
Write EEPROM Memory
(byte access)
Load EEPROM Memory
Page (page access)
Write EEPROM Memory
Page (page access)
Read Lock Bits
Write Lock Bits
Read Signature Byte
Write Fuse Bits
Write Fuse High Bits
Write Extended Fuse Bits
Read Fuse Bits
1010 1100
1010 1100
0010 H000
0100 H000
0100 1100
1010 0000
1100 0000
1100 0001
1100 0010
0101 1000
1010 1100
0011 0000
1010 1100
1010 1100
1010 1100
0101 0000
Byte 1
0101 0011
100x xxxx
00aa aaaa
00xx xxxx
00aa aaaa
00xx xxaa
00xx xxaa
0000 0000
00xx xxaa
0000 0000
111x xxxx
00xx xxxx
1010 0000
1010 1000
1010 0100
0000 0000
Byte 2
Instruction Format
(1)
xxxx xxxx
xxxx xxxx
bbbb bbbb
xxbb bbbb
bbxx xxxx
bbbb bbbb
bbbb bbbb
0000 00bb
bbbb bb00
xxxx xxxx
xxxx xxxx
xxxx xxbb
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
xxxx xxxx
oooo oooo
iiii iiii
iiii iiii
xxxx xxxx
xxoo oooo
11ii iiii
oooo oooo
iiii iiii
iiii iiii
xxxx xxii
oooo oooo
Byte4
ATmega162(V/U/L)
Operation
Enable SPI Serial Programming
after RESET goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from
Program memory at word address
a:b.
Write H (high or low) data i to
Program Memory page at word
address b. Data low byte must be
loaded before Data high byte is
applied within the same address.
Write Program Memory Page at
address a:b.
Read data o from EEPROM
memory at address a:b.
Write data i to EEPROM memory
at address a:b.
Load data i to EEPROM memory
page buffer. After data is loaded,
program EEPROM page.
Write EEPROM page at address
a:b.
Read Lock bits. “0” = programmed,
“1” = unprogrammed. See
97 on page 228
Write Lock bits. Set bits = “0” to
program Lock bits. See
on page 228
Read Signature Byte o at address
b.
Set bits = “0” to program, “1” to
unprogram. See
page 230
Set bits = “0” to program, “1” to
unprogram. See
page 230
Set bits = “0” to program, “1” to
unprogram. See
page 229
Read Fuse bits. “0” = programmed,
“1” = unprogrammed. See
101 on page 230
for details.
for details.
for details.
for details.
Table 101 on
Table 100 on
Table 99 on
for details.
for details.
Table 97
Table
Table
245

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