DSPIC30F4013T-20I/ML Microchip Technology, DSPIC30F4013T-20I/ML Datasheet - Page 46
DSPIC30F4013T-20I/ML
Manufacturer Part Number
DSPIC30F4013T-20I/ML
Description
IC DSPIC MCU/DSP 48K 44QFN
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F5011T-20IPT.pdf
(34 pages)
3.DSPIC30F6010T-20IPF.pdf
(6 pages)
4.DSPIC30F3014T-20IML.pdf
(220 pages)
Specifications of DSPIC30F4013T-20I/ML
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
AC'97, Brown-out Detect/Reset, I²S, POR, PWM, WDT
Number Of I /o
30
Program Memory Size
48KB (16K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 13x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFN
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
DSPIC30F4013T20IM
- DSPIC30F2011-20ISO PDF datasheet
- DSPIC30F5011T-20IPT PDF datasheet #2
- DSPIC30F6010T-20IPF PDF datasheet #3
- DSPIC30F3014T-20IML PDF datasheet #4
- Current page: 46 of 220
- Download datasheet (6Mb)
dsPIC30F3014/4013
5.6.3
Example 5-2 shows a sequence of instructions that
can be used to load the 96 bytes of write latches. 32
TBLWTL and 32 TBLWTH instructions are needed to
load the write latches selected by the table pointer.
EXAMPLE 5-2:
EXAMPLE 5-3:
DS70138C-page 44
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 31st_program_word
Note: In Example 5-2, the contents of the upper byte of W3 has no effect.
2nd_program_word
MOV
MOV
MOV
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
•
•
•
MOV
MOV
TBLWTL W2
TBLWTH W3
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
LOADING WRITE LATCHES
#0x0000,W0
W0
#0x6000,W0
#LOW_WORD_0,W2
#HIGH_BYTE_0,W3
#LOW_WORD_1,W2
#HIGH_BYTE_1,W3
#LOW_WORD_2,W2
#HIGH_BYTE_2,W3
#LOW_WORD_31,W2
#HIGH_BYTE_31,W3
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
LOADING WRITE LATCHES
INITIATING A PROGRAMMING SEQUENCE
TBLPAG
[W0]
[W0++]
[W0]
[W0++]
NVMKEY
NVMKEY
[W0]
[W0++]
[W0]
[W0++]
Advance Information
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
5.6.4
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
executed, the user must wait for the programming time
until programming is complete. The two instructions
following the start of the programming sequence
should be NOPs as shown in Example 5-3.
INITIATING THE PROGRAMMING
SEQUENCE
2004 Microchip Technology Inc.
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