ATTINY2313V-10PI Atmel, ATTINY2313V-10PI Datasheet - Page 163
![IC AVR MCU FLASH 2K 1.8V 20DIP](/photos/6/80/68043/313-20-dip_sml.jpg)
ATTINY2313V-10PI
Manufacturer Part Number
ATTINY2313V-10PI
Description
IC AVR MCU FLASH 2K 1.8V 20DIP
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY2313V-10PI
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
18
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Data Converters
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATTINY2313V-10PI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
- Current page: 163 of 226
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Serial
Programming Pin
Mapping
Parallel
Programming
Enter Programming
Mode
Considerations for
Efficient Programming
Chip Erase
2543L–AVR–08/10
Table 75. Pin Mapping Serial Programming
The following algorithm puts the device in Parallel programming mode:
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Ensure that V
4. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
5. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
6. Wait at least 300 µs before giving any parallel programming commands.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
If the rise time of the V
tive algorithm can be used.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
5. Wait until V
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
0V.
applied to ensure the Prog_enable Signature has been latched.
to 0V.
applied to ensure the Prog_enable Signature has been latched.
commands.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
Symbol
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
MOSI
MISO
SCK
CC
, and as soon as V
CC
CC
actually reaches 4.5 -5.5V before giving any parallel programming
reaches at least 1.8V within the next 20 µs.
CC
is unable to fulfill the requirements listed above, the following alterna-
Pins
PB5
PB6
PB7
CC
CC
and GND.
Table 72 on page 162
and GND.
CC
Table 72 on page 162
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
(1)
memories plus Lock bits. The Lock bits are
I/O
O
I
I
to “0000”, RESET pin to 0V and V
to “0000”, RESET pin and V
Serial Data out
Serial Data in
Description
Serial Clock
CC
CC
to
163
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