ATTINY44V-10PU Atmel, ATTINY44V-10PU Datasheet - Page 169
![IC MCU AVR 4K FLASH 10MHZ 14-DIP](/photos/7/39/73953/313-14-dip_sml.jpg)
ATTINY44V-10PU
Manufacturer Part Number
ATTINY44V-10PU
Description
IC MCU AVR 4K FLASH 10MHZ 14-DIP
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY44V-10PU
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
14-DIP (0.300", 7.62mm)
Package
14PDIP
Device Core
AVR
Family Name
ATtiny
Maximum Speed
10 MHz
Operating Supply Voltage
2.5|3.3|5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
12
Interface Type
SPI/USI
On-chip Adc
8-chx10-bit
Number Of Timers
2
For Use With
ATAVRISP2 - PROGRAMMER AVR IN SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 169 of 238
- Download datasheet (5Mb)
19.7.2
19.7.3
19.7.4
8006K–AVR–10/10
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the Program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are re-
programmed.
Note:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
When writing or reading serial data to the ATtiny24/44/84, data is clocked on the rising edge of
the serial clock, see
page 184
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
• Address High byte needs only be loaded before programming or reading a new 256 word
1. Load command “Chip Erase” (see
2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.
3. Load Command “No Operation”.
1. Load Command “Write Flash” (see
2. Load Flash Page Buffer.
3. Load Flash High Address and Program Page. Wait after Instr. 3 until SDO goes high for
4. Repeat 2 through 3 until the entire Flash is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
the “Page Programming” cycle to finish.
programmed.
1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
for details.
Figure 20-6 on page
“Page Size” on page
Table 19-16 on page
Table 19-16 on page
184,
Figure 19-3 on page 167
(1)
memories plus Lock bits. The Lock bits are
162. When programming the Flash,
171).
171).
ATtiny24/44/84
and
Table 20-13 on
169
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