ATTINY44V-10PU Atmel, ATTINY44V-10PU Datasheet - Page 173
![IC MCU AVR 4K FLASH 10MHZ 14-DIP](/photos/7/39/73953/313-14-dip_sml.jpg)
ATTINY44V-10PU
Manufacturer Part Number
ATTINY44V-10PU
Description
IC MCU AVR 4K FLASH 10MHZ 14-DIP
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY44V-10PU
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
14-DIP (0.300", 7.62mm)
Package
14PDIP
Device Core
AVR
Family Name
ATtiny
Maximum Speed
10 MHz
Operating Supply Voltage
2.5|3.3|5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
12
Interface Type
SPI/USI
On-chip Adc
8-chx10-bit
Number Of Timers
2
For Use With
ATAVRISP2 - PROGRAMMER AVR IN SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Table 19-16. High-voltage Serial Programming Instruction Set for ATtiny24/44/84 (Continued)
Notes:
8006K–AVR–10/10
Instruction
Write Lock
Bits
Read Fuse
Low Bits
Read Fuse
High Bits
Read Fuse
Extended Bits
Read Lock
Bits
Read
Signature
Bytes
Read
Calibration
Byte
Load “No
Operation”
Command
1. a = address high bits, b = address low bits, d = data in high bits, e = data in low bits, p = data out high bits, q = data out low
2. For page sizes less than 256 words, parts of the address (bbbb_bbbb) will be parts of the page address.
3. For page sizes less than 256 bytes, parts of the address (bbbb_bbbb) will be parts of the page address.
4. The EEPROM is written page-wise. But only the bytes that are loaded into the page are actually written to the EEPROM.
bits, x = don’t care, 1 = Lock Bit1, 2 = Lock Bit2, 3 = CKSEL0 Fuse, 4 = CKSEL1 Fuse, 5 = CKSEL2 Fuse, 6 = CKSEL3
Fuse, 7 = SUT0 Fuse, 8 = SUT1 Fuse, 9 = CKOUT Fuse, A = CKDIV8 Fuse, B = BODLEVEL0 Fuse, C = BODLEVEL1
Fuse, D= BODLEVEL2 Fuse, E = EESAVE Fuse, F = WDTON Fuse, G = SPIEN Fuse, H = DWEN Fuse, I = RSTDISBL
Fuse, J = SELFPRGEN
Page-wise EEPROM access is more efficient when multiple bytes are to be written to the same page. Note that auto-erase
of EEPROM is not available in High-voltage Serial Programming, only in SPI Programming.
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
0_0010_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_0100_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_0100_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_0100_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_1000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_1000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_0100_00
0_0100_1100_00
x_xxxx_xxxx_xx
Instr.1/5
0_0000_0021_00
0_0010_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1010_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1000_00
x_xxxx_xxxx_xx
0_0000_00bb_00
0_0000_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0000_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1010_00
x_xxxx_xxxx_xx
Instr.2/6
Instruction Format
0_0000_0000_00
0_0110_0100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
A_9876_543x_xx
0_0000_0000_00
0_0111_1100_00
I_HGFE_DCBx_xx
0_0000_0000_00
0_0110_1100_00
x_xxxx_x21x_xx
0_0000_0000_00
0_0110_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1110_00
x_xxxx_xxJx_xx
Instr.3/7
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
q_qqqq_qqqx_xx
0_0000_0000_00
0_0111_1100_00
p_pppp_pppx_xx
Instr.4
ATtiny24/44/84
Operation Remarks
Wait after Instr. 4 until SDO
goes high. Write 2 - 1 = “0” to
program the Lock Bit.
Reading A - 3 = “0” means the
Fuse bit is programmed.
Reading F - B = “0” means the
Fuse bit is programmed.
Reading J = “0” means the
Fuse bit is programmed.
Reading 2, 1 = “0” means the
Lock bit is programmed.
Repeats Instr 2 4 for each
signature byte address.
173
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