MC68HC908JL8CDW Freescale Semiconductor, MC68HC908JL8CDW Datasheet - Page 35

• Manufacturer Part Number: MC68HC908JL8CDW
• Description: IC MCU 8K FLASH 8MHZ 28-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908JL8CDW

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 23
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 13x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

2.9 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
2.10 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0 or $XXE0. Use this
step-by-step procedure to program a row of FLASH memory:
(Figure 2-4
Freescale Semiconductor
10. After time, t
10. After time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the FLASH memory address range.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the row to be programmed.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
address and data for programming.
shows a flowchart of the programming algorithm.)
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
MC68HC908JL8/JK8 • MC68HC08JL8/JK8 • MC68HC908KL8 Data Sheet, Rev. 3.1
rcv
rcv
(1µs)
(1µs)
merase
nvh
nvs
nvh1
nvs
pgs
,
(10µs).
,
(10µs).
(5µs).
(5µs).
the memory can be accessed in read mode again.
the memory can be accessed in read mode again.
(100µs).
(4ms).
NOTE
NOTE
FLASH Mass Erase Operation
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