MC68HC908JL8CDW Freescale Semiconductor, MC68HC908JL8CDW Datasheet - Page 35
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MC68HC908JL8CDW
Manufacturer Part Number
MC68HC908JL8CDW
Description
IC MCU 8K FLASH 8MHZ 28-SOIC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908JL8CDWER.pdf
(212 pages)
Specifications of MC68HC908JL8CDW
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI
Peripherals
LED, LVD, POR, PWM
Number Of I /o
23
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 13x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC68HC908JL8CDW
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Part Number:
MC68HC908JL8CDWE
Manufacturer:
FREESCALE
Quantity:
20 000
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2.9 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
2.10 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0 or $XXE0. Use this
step-by-step procedure to program a row of FLASH memory:
(Figure 2-4
Freescale Semiconductor
10. After time, t
10. After time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the FLASH memory address range.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the row to be programmed.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
address and data for programming.
shows a flowchart of the programming algorithm.)
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
MC68HC908JL8/JK8 • MC68HC08JL8/JK8 • MC68HC908KL8 Data Sheet, Rev. 3.1
rcv
rcv
(1µs)
(1µs)
merase
nvh
nvs
nvh1
nvs
pgs
,
(10µs).
,
(10µs).
(5µs).
(5µs).
the memory can be accessed in read mode again.
the memory can be accessed in read mode again.
(100µs).
(4ms).
NOTE
NOTE
FLASH Mass Erase Operation
35
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