MC68HC908GZ8VFA Freescale Semiconductor, MC68HC908GZ8VFA Datasheet - Page 302

• Manufacturer Part Number: MC68HC908GZ8VFA
• Description: IC MCU 8K FLASH 8MHZ CAN 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908GZ8VFA

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: CAN, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 48-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Electrical Specifications
21.15 Memory Characteristics
302
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
Read
RCV
HV
memory.
memory.
clearing HVEN to 0.
t
defines Typical Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(6)
Characteristic
(7)
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 4
NVS
+ t
Erase
MErase
NVH
(min), there is no erase disturb, but it reduces the endurance of the FLASH
+ t
(min), there is no erase disturb, but it reduces the endurance of the FLASH
PGS
+ (t
PROG
x 32) ≤ t
t
Symbol
MErase
t
f
t
Erase
Read
t
V
t
RCV
t
HV
PROG
t
t
t
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
(5)
maximum.
(4)
(1)
(2)
(3)
10 k
Min
100
1.3
0.9
3.6
10
30
15
—
1
0
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
1
4
Freescale Semiconductor
Max
8 M
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V