LF353DT STMicroelectronics, LF353DT Datasheet - Page 4
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LF353DT
Manufacturer Part Number
LF353DT
Description
IC OPAMP J-FET DUAL 8-SOIC
Manufacturer
STMicroelectronics
Specifications of LF353DT
Amplifier Type
J-FET
Number Of Circuits
2
Slew Rate
16 V/µs
Gain Bandwidth Product
4MHz
Current - Input Bias
20pA
Voltage - Input Offset
3000µV
Current - Supply
1.4mA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
±3 V ~ 16 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Bandwidth
4 MHz
Channel Separation
120
Common Mode Rejection Ratio
86
Current, Input Bias
20 pA
Current, Input Offset
5 pA
Current, Output
40 mA
Current, Supply
1.4 mA
Harmonic Distortion
0.01 %
Number Of Amplifiers
Dual
Package Type
SO-8
Resistance, Input
10^12 Ohms
Signal Gain
200 V/mV
Temperature, Operating, Range
0 to +70 °C
Time, Rise
0.1 μs
Voltage, Input
±15 V
Voltage, Noise
15 nV/sqrt Hz
Voltage, Offset
3 mV
Voltage, Supply
6 to 36 V
Number Of Channels
2
Voltage Gain Db
106.02 dB
Common Mode Rejection Ratio (min)
70 dB
Input Offset Voltage
10 mV
Supply Current
3.2 mA
Maximum Power Dissipation
680 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Maximum Dual Supply Voltage
+/- 18 V
Minimum Operating Temperature
0 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
497-2967-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
3
Table 3.
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
4/15
Symbol
V
±V
CMR
GBP
SVR
THD
o1
DV
V
temperature.
∅m
A
I
I
SR
K
V
e
I
I
CC
OS
R
icm
t
io
ib
vd
/V
opp
ov
r
io
n
i
io
o2
Input offset voltage (R
Input offset voltage drift
Input offset current
Input bias current
Large signal voltage gain (R
Supply voltage rejection ratio (R
Supply current, no load
Input common mode voltage range
Common mode rejection ratio (R
Output short-circuit current
Output voltage swing
T
Slew rate, V
Rise time, V
Overshoot, V
Gain bandwidth product, f = 100kHz, V
Input resistance
Total harmonic distortion, f= 1kHz, A
V
Equivalent input noise voltage
Phase margin
Channel separation (A
min
o
T
T
T
T
T
T
T
T
R
R
R
R
R
Electrical characteristics
Electrical characteristics at V
= 2V
min
min
min
min
min
min
min
min
L
L
L
L
S
≤ T
= 2kΩ
= 10kΩ
= 2kΩ
= 10kΩ
= 100Ω, f = 1KHz
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
pp
amb
amb
amb
amb
amb
amb
amb
amb
amb
i
i
≤ T
= 10V, R
= 20mV, R
i
= 20mV, R
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
max
max
max
max
max
max
max
max
max
(1)
(1)
L
s
v
= 2kΩ , C
= 10kΩ)
L
= 100)
L
= 2kΩ , C
= 2kΩ , C
L
= 2kΩ , V
Parameter
L
S
S
= 100pF, unity gain
= 10kΩ)
L
= 10kΩ)
L
= 100pF, unity gain
v
= 100pF, unity gain
Doc ID 2153 Rev 3
= 20dB, R
CC
o
in
= ±10V)
= 10mV, R
= ±15 V, T
L
= 2kΩ, C
L
amb
= 2kΩ , C
= +25°C (unless otherwise specified)
L
=100pF,
L
= 100pF
Min. Typ. Max.
±11 +15
2.5
50
25
80
80
70
70
10
10
10
12
10
12
12
13.5
10
0.01
200
120
-12
1.4
0.1
10
20
86
86
40
12
16
10
15
45
3
5
4
12
LF253, LF353
100
200
3.2
3.2
10
13
20
60
60
4
Degrees
µV/°C
V/mV
MHz
Unit
V/µs
----------- -
mV
mA
mA
pA
nA
pA
nA
dB
dB
nV
dB
µs
%
%
V
V
Ω
Hz