LF353DT STMicroelectronics, LF353DT Datasheet - Page 4

• Manufacturer Part Number: LF353DT
• Description: IC OPAMP J-FET DUAL 8-SOIC
• Manufacturer: STMicroelectronics

Specifications of LF353DT

• Amplifier Type: J-FET
• Number Of Circuits: 2
• Slew Rate: 16 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 20pA
• Voltage - Input Offset: 3000µV
• Current - Supply: 1.4mA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/dual (±): ±3 V ~ 16 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Bandwidth: 4 MHz
• Channel Separation: 120
• Common Mode Rejection Ratio: 86
• Current, Input Bias: 20 pA
• Current, Input Offset: 5 pA
• Current, Output: 40 mA
• Current, Supply: 1.4 mA
• Harmonic Distortion: 0.01 %
• Number Of Amplifiers: Dual
• Package Type: SO-8
• Resistance, Input: 10^12 Ohms
• Signal Gain: 200 V/mV
• Temperature, Operating, Range: 0 to +70 °C
• Time, Rise: 0.1 μs
• Voltage, Input: ±15 V
• Voltage, Noise: 15 nV/sqrt Hz
• Voltage, Offset: 3 mV
• Voltage, Supply: 6 to 36 V
• Number Of Channels: 2
• Voltage Gain Db: 106.02 dB
• Common Mode Rejection Ratio (min): 70 dB
• Input Offset Voltage: 10 mV
• Supply Current: 3.2 mA
• Maximum Power Dissipation: 680 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-2967-2

Electrical characteristics
3
Table 3.
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
4/15
Symbol
V
±V
CMR
GBP
SVR
THD
o1
DV
V
temperature.
∅m
A
I
I
SR
K
V
e
I
I
CC
OS
R
icm
t
io
ib
vd
/V
opp
ov
r
io
n
i
io
o2
Input offset voltage (R
Input offset voltage drift
Input offset current
Input bias current
Large signal voltage gain (R
Supply voltage rejection ratio (R
Supply current, no load
Input common mode voltage range
Common mode rejection ratio (R
Output short-circuit current
Output voltage swing
T
Slew rate, V
Rise time, V
Overshoot, V
Gain bandwidth product, f = 100kHz, V
Input resistance
Total harmonic distortion, f= 1kHz, A
V
Equivalent input noise voltage
Phase margin
Channel separation (A
min
o
T
T
T
T
T
T
T
T
R
R
R
R
R
Electrical characteristics
Electrical characteristics at V
= 2V
min
min
min
min
min
min
min
min
L
L
L
L
S
≤ T
= 2kΩ
= 10kΩ
= 2kΩ
= 10kΩ
= 100Ω, f = 1KHz
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
pp
amb
amb
amb
amb
amb
amb
amb
amb
amb
i
i
≤ T
= 10V, R
= 20mV, R
i
= 20mV, R
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
max
max
max
max
max
max
max
max
max
(1)
(1)
L
s
v
= 2kΩ , C
= 10kΩ)
L
= 100)
L
= 2kΩ , C
= 2kΩ , C
L
= 2kΩ , V
Parameter
L
S
S
= 100pF, unity gain
= 10kΩ)
L
= 10kΩ)
L
= 100pF, unity gain
v
= 100pF, unity gain
Doc ID 2153 Rev 3
= 20dB, R
CC
o
in
= ±10V)
= 10mV, R
= ±15 V, T
L
= 2kΩ, C
L
amb
= 2kΩ , C
= +25°C (unless otherwise specified)
L
=100pF,
L
= 100pF
Min. Typ. Max.
±11 +15
2.5
50
25
80
80
70
70
10
10
10
12
10
12
12
13.5
10
0.01
200
120
-12
1.4
0.1
10
20
86
86
40
12
16
10
15
45
3
5
4
12
LF253, LF353
100
200
3.2
3.2
10
13
20
60
60
4
Degrees
µV/°C
V/mV
MHz
Unit
V/µs
----------- -
mV
mA
mA
pA
nA
pA
nA
dB
dB
nV
dB
µs
%
%
V
V
Ω
Hz