LF353N/NOPB National Semiconductor, LF353N/NOPB Datasheet - Page 3

• Manufacturer Part Number: LF353N/NOPB
• Description: IC OP AMP WB DUAL JFET IN 8-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of LF353N/NOPB

• Amplifier Type: J-FET
• Number Of Circuits: 2
• Slew Rate: 13 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 50pA
• Voltage - Input Offset: 5000µV
• Current - Supply: 3.6mA
• Voltage - Supply, Single/dual (±): 10 V ~ 36 V, ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Bandwidth: 4 MHz
• Channel Separation: -120
• Common Mode Rejection Ratio: 100
• Current, Input Bias: 50 pA
• Current, Input Offset: 25 pA
• Current, Output: 20 mA
• Current, Supply: 3.6 mA
• Harmonic Distortion: 0.02 %
• Number Of Amplifiers: Dual
• Package Type: MDIP-8
• Resistance, Input: 10^12 Ohms
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 100 V/mV
• Voltage, Input: 10 to 36 V
• Voltage, Noise: 16 nV/sqrt Hz
• Voltage, Offset: 5 mV
• Voltage, Output, High: 13.5 V
• Voltage, Output, Low: -13.5 V
• Voltage, Supply: ±15 V
• Dc: N/A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LF353N; LF353; LF353NNS

THD
AC Electrical Characteristics
(Note 5)
Note 2: For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115˚C/W typ junction to ambient for the N package,
and 158˚C/W typ junction to ambient for the H package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for V
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
recommended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. V
=
Note 8: Human body model, 1.5 kΩ in series with 100 pF.
Typical Performance Characteristics
Symbol
±
6V to
±
15V.
Total Harmonic Distortion
Input Bias Current
Supply Current
Parameter
S
=
±
15V and 0˚C≤T
D
. T
A
00564920
00564918
≤+70˚C. V
j
=T
(Continued)
A
+θ
A
V
BW=20 Hz-20 kHz
jA
V
O
P
=+10, RL=10k,
=20Vp−p,
OS
D
, I
where θ
B
and I
Conditions
3
OS
jA
is the thermal resistance from junction to ambient. Use of a heat sink is
are measured at V
Positive Common-Mode Input Voltage Limit
CM
=0.
Input Bias Current
Min
LF353
<
Typ
0.02
Max
j
. Due to the limited
00564919
00564921
Units
%
S