LF353N/NOPB National Semiconductor, LF353N/NOPB Datasheet - Page 4

IC OP AMP WB DUAL JFET IN 8-DIP

LF353N/NOPB

Manufacturer Part Number
LF353N/NOPB
Description
IC OP AMP WB DUAL JFET IN 8-DIP
Manufacturer
National Semiconductor
Series
BI-FET II™r
Datasheets

Specifications of LF353N/NOPB

Amplifier Type
J-FET
Number Of Circuits
2
Slew Rate
13 V/µs
Gain Bandwidth Product
4MHz
Current - Input Bias
50pA
Voltage - Input Offset
5000µV
Current - Supply
3.6mA
Voltage - Supply, Single/dual (±)
10 V ~ 36 V, ±5 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Bandwidth
4 MHz
Channel Separation
-120
Common Mode Rejection Ratio
100
Current, Input Bias
50 pA
Current, Input Offset
25 pA
Current, Output
20 mA
Current, Supply
3.6 mA
Harmonic Distortion
0.02 %
Number Of Amplifiers
Dual
Package Type
MDIP-8
Resistance, Input
10^12 Ohms
Temperature, Operating, Range
0 to +70 °C
Voltage, Gain
100 V/mV
Voltage, Input
10 to 36 V
Voltage, Noise
16 nV/sqrt Hz
Voltage, Offset
5 mV
Voltage, Output, High
13.5 V
Voltage, Output, Low
-13.5 V
Voltage, Supply
±15 V
Dc
N/A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Current - Output / Channel
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*LF353N
LF353
LF353NNS
Physical Dimensions
inches (millimeters) unless otherwise noted
Order Number LF353M or LF353MX
NS Package Number M08A
Molded Dual-In-Line Package
Order Number LF353N
NS Package N08E
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